METHOD OF MANUFACTURING SiC INGOT

A method of manufacturing a SiC ingot, comprising:

• a measuring step of measuring a curving direction of an atomic arrangement plane of a SiC single crystal at least along a first direction passing through a center in plan view and a second direction intersecting with the first direction so as to obtain a shape of the atomic arrangement plane;
• and
• a crystal growth step of performing crystal growth using the SiC single crystal as a seed crystal,
• wherein in a case where the shape of the atomic arrangement plane measured in the measuring step is a saddle type that the curving direction of the atomic arrangement plane is different in the first direction and the second direction, a crystal growth condition in the crystal growth step is set such that a convexity of a second growth front at the end of crystal growth becomes larger than a convexity of a first growth front when the amount of crystal growth in the center of the seed crystal is 7 mm.