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US 2019/0194822 A1Published application
SiC INGOT AND METHOD OF MANUFACTURING SiC INGOT
AssigneeShowa Denko K.K.
InventorsRimpei KINDAICHI, Yohei Fujikawa, Yoshishige Okuno
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Abstract
A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
Claims9
A SiC ingot comprising:
- a core portion;
- and
- a surface layer that is formed on a plane of the core portion in a growing direction,
- wherein a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
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A method of manufacturing a SiC ingot comprising:
- a first step of causing a single crystal that becomes a core portion to grow in one plane of a seed crystal;
- a second step of causing a surface layer to grow in a plane of the core portion on a side opposite to the seed crystal in an atmosphere with higher concentration of dopant gas than that in the first step;
- and
- a third step of cooling a produced SiC ingot after the second step.
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Dependencies are inferred from the claim text.