Method of producing silicon carbide single crystal

Abstract

A method of producing a silicon carbide single crystal capable of producing a silicon carbide single crystal substrate in which the number of occurrences of basal plane dislocations is reduced to 100 cm−2 or less is provided. The method of producing a silicon carbide single crystal includes in this order: a preliminary heating step of heating a silicon carbide seed crystal to a temperature of 2000° C. or higher, before growing the silicon carbide single crystal on the silicon carbide seed crystal, in the state in which the silicon carbide seed crystal is attached on an arranged graphite member on one side of a crucible, and a silicon carbide raw material is provided on the other side; and a cooling step of cooling the silicon carbide seed crystal to a room temperature.

Dependencies are inferred from the claim text.