Apparatus and methods for atomic layer deposition
AssigneePicosun Oy
InventorsNiklas HOLM, Juhana KOSTAMO, Timo MALINEN, Marko PUDAS
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Abstract
A system and method for atomic layer deposition, ALD, where an actuator arrangement is configured to receive a batch of substrates and transfer the substrates through a first load-lock horizontally into a vacuum chamber, and to lower the substrates within the vacuum chamber into a reaction chamber thus closing the reaction chamber with a lid.
Claims29
A system for atomic layer deposition, ALD, comprising:
- a reaction chamber element comprising
- a vacuum chamber;
- a reaction chamber inside the vacuum chamber;
- and
- a gas inlet arrangement and a foreline configured to provide a horizontal flow of gas in the reaction chamber;
- an actuator arrangement comprising a reaction chamber lid, and
- at least a first load-lock element comprising a first load-lock,
- the actuator arrangement being configured to receive a substrate or a batch of substrates to be processed and transfer the substrate or the batch of substrates through the first load-lock horizontally into the vacuum chamber,
- the actuator arrangement being further configured to lower the substrate or the batch of substrates within the vacuum chamber into the reaction chamber thus closing the reaction chamber with the lid.
A method of operating a system for atomic layer deposition, ALD, comprising:
- transferring a substrate or a batch of substrates into a first load-lock;
- transferring the substrate or the batch of substrates further from the first load-lock via a first loading valve and a loading opening horizontally into a vacuum chamber;
- receiving the substrate or the batch of substrates in the vacuum chamber and lowering the substrate or the batch of substrates into a reaction chamber inside the vacuum chamber, the act of lowering closing the reaction chamber with a lid;
- carrying out atomic layer deposition in the reaction chamber;
- raising the substrate or the batch of substrates from the reaction chamber;
- receiving the substrate or the batch of substrates from the reaction chamber and transferring the substrate or the batch of substrates via the first or a second loading valve and a loading opening from the vacuum chamber into the first or a second load-lock.
A method of operating a system for atomic layer deposition, ALD, comprising:
- providing a shield element on the outside of a reaction chamber but on the inside of a vacuum chamber;
- moving the shield element within the vacuum chamber in front of a loading opening of the vacuum chamber;
- and
- carrying out atomic layer deposition in the reaction chamber inside the vacuum chamber.
An apparatus for atomic layer deposition, ALD, comprising:
- a reaction chamber inside a vacuum chamber;
- and
- a shield element on the outside of a reaction chamber but on the inside of the vacuum chamber, the apparatus being configured to
- move the shield element within the vacuum chamber in front of a loading opening of the vacuum chamber;
- and
- carry out atomic layer deposition in the reaction chamber inside the vacuum chamber.
A method of operating a system for atomic layer deposition, ALD, comprising:
- providing a reaction chamber inside a vacuum chamber, and a foreline leading from the reaction chamber to the outside of the vacuum chamber, the method comprising:
- maintaining heat within the foreline by allowing the foreline to take a detour within the vacuum chamber on its way to the outside of the vacuum chamber.
An apparatus for atomic layer deposition, ALD, comprising:
- a reaction chamber inside a vacuum chamber;
- and
- a foreline taking a detour on its way from the reaction chamber to the outside of the vacuum chamber.
A method of operating a system for atomic layer deposition, ALD, comprising:
- providing a reaction chamber inside a vacuum chamber;
- carrying out atomic layer deposition on a sensitive substrate or a batch of sensitive substrates in the reaction chamber;
- transferring, after the deposition, the substrate or a batch of sensitive substrates via the vacuum chamber to a load lock connected to the vacuum chamber;
- and
- cooling the sensitive substrate or a batch of sensitive substrates within the load lock in vacuum.
An apparatus for atomic layer deposition, ALD, comprising:
- a reaction chamber element comprising a reaction chamber inside a vacuum chamber;
- a foreline connected to the reaction chamber and configured to lead gases out from the reaction chamber;
- a residual gas analyzer connected to the foreline;
- and
- a control element connected to the reaction chamber element and to the residual gas analyzer, wherein
- the control element is configured to control process timing by received information measured by the residual gas analyzer.
Dependencies are inferred from the claim text.