Film forming method

A film forming method that forms a film including a predetermined element on a plurality of substrates using a film forming apparatus including

• a turntable rotatably provided within a chamber and including an upper surface with a plurality of placing parts on which the plurality of substrates are placed,
• a heater unit provided under the turntable,
• a first process region sectioning a region above the upper surface of the turntable and including a first gas supply part configured to supply a gas towards the upper surface of the turntable,
• a second process region arranged at a position separated from the first process region along a circumferential direction of the turntable, and configured to supply a gas towards the upper surface of the turntable,
• a separation gas supply part provided between the first process region and the second process region, and configured to supply a separation gas toward the upper surface of the turntable, and
• a separation region including a ceiling surface that forms spaces with respect to the upper surface of the turntable to guide the separation gas from the separation gas supply part toward the upper surface of the turntable,
• the film forming method comprising:
• performing a film forming process to form the film including the predetermined element on the plurality of substrates, by supplying a first reaction gas including the predetermined element from the first gas supply part and supplying a second reaction gas from the second gas supply part in a raised state of the turntable, and rotating the turntable to undergo a predetermined number of revolutions in a state in which the separation gas is supplied from the separation gas supply part;
• and
• performing an anneal process at least before or after the film forming process, by supplying the separation gas or the second reaction gas from the first gas supply part and supplying the separation gas or the second reaction gas from the second gas supply part in a lowered state of the turntable, and rotating the turntable to undergo at least 1 revolution in a state in which the separation gas is supplied from the separation gas supply part.