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US 2019/0194797 A1Published application
Chalcogenide film, device including, and method of forming the same
AssigneeNanyang Technological University
InventorsXuechao YU, Peng YU, Qijie WANG, Zheng LIU
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Abstract
A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
Claims21
A chalcogenide film comprising:
- a noble metal chalcogenide material having a formula MCx;
- wherein M represents a noble metal;
- wherein C represents a chalcogen;
- wherein x is any one positive value equal to or more than 1.4 and less than 2;
- and
- wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
3 more elements
A device comprising a chalcogenide film, the chalcogenide film comprising:
- a noble metal chalcogenide material having a formula MCx;
- wherein M represents a noble metal;
- wherein C represents a chalcogen;
- wherein x is any one positive value equal to or more than 1.4 and less than 2;
- and
- wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
3 more elements
A method of forming a chalcogenide film, the method comprising:
- forming a noble metal chalcogenide material having a formula MCx;
- wherein M represents a noble metal;
- wherein C represents a chalcogen;
- wherein x is any one positive value equal to or more than 1.4 and less than 2;
- and
- wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
3 more elements
A chalcogenide film formed by a method comprising:
- forming a noble metal chalcogenide material having a formula MCx;
- wherein M represents a noble metal;
- wherein C represents a chalcogen;
- wherein x is any one positive value equal to or more than 1.4 and less than 2;
- and
- wherein the chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.
3 more elements
Dependencies are inferred from the claim text.