Composition for semiconductor treatment and treatment method
AssigneeJsr Corporation
InventorsKatsutaka YOKOI, Ken-ichi YAMAMOTO, Ran MITSUBOSHI, Kanae MASUDA, Satoshi KAMO, Tomotaka SHINODA
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AssigneeJsr Corporation
InventorsKatsutaka YOKOI, Ken-ichi YAMAMOTO, Ran MITSUBOSHI, Kanae MASUDA, Satoshi KAMO, Tomotaka SHINODA
Estimating the term…
Provided are a composition for semiconductor treatment capable of suppressing damage due to corrosion to wiring or the like including tungsten on an object to be treated, and efficiently removing contamination from a surface of the object to be treated, and a treatment method using the composition for semiconductor treatment. The treatment method includes a step of, after subjecting a wiring board including tungsten as a wiring material to chemical mechanical polishing using a composition containing an iron ion and a peroxide, subjecting the wiring board to treatment with a composition for semiconductor treatment which includes: a compound (A) having two or more of at least one selected from a group consisting of tertiary amino groups and salts thereof; and a water-soluble compound (B) having a solubility parameter of 10 or more, and which has a pH of from 2 to 7.
A treatment method, comprising:
A composition for semiconductor treatment of a concentrated type for treating a surface of an object having arranged thereon wiring containing tungsten, the composition comprising:
A composition for semiconductor treatment of a non-dilution type for treating a surface of an object having arranged thereon wiring containing tungsten, the composition comprising:
Dependencies are inferred from the claim text.