# US 2019/0174034 A1 · Solid-state imaging device and method for manufacturing the same, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0174034 A1 - Document ID: US20190174034A1 - Status: Published application - Kind: A1 - Application number: 16/251,559 - Filed: 2019-01-18 - Published: 2019-06-06 - Earliest claimed: 2013-07-03 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yoshiaki MASUDA; Yuki MIYANAMI; Hideshi ABE; Tomoyuki HIRANO; Masanari YAMAGUCHI; Yoshiki EBIKO; Kazufumi WATANABE; Tomoharu OGITA - Web page: https://patentgrep.com/patent/US20190174034A1 ## CPC - H04N 25/633: by using optical black pixels - G02B 1/118: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures - H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/62: Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/8067: {Reflectors} - H10F 39/807: {Pixel isolation structures} - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type. ## Claims ### Claim at position 1 1-16. (canceled) ### Claim 17 A solid-state imaging device, comprising: a semiconductor substrate having a first surface that receives incident light and a second surface opposite to the first surface; a first trench and a second trench disposed in the first surface of the semiconductor substrate; and a first concave structure and a second concave structure disposed between the first trench and the second trench and in the first surface of the semiconductor substrate, depths of the first concave structure and the second concave being shallower than depths of the first trench and the second trench, wherein a first flat part of the semiconductor substrate is disposed between the first trench and the first concave structure, wherein a second flat part of the semiconductor substrate is disposed between the second trench and the second concave structure, and wherein a third flat part of the semiconductor substrate is disposed between the first concave structure and the second concave structure, the third flat part being parallel to the first flat part and the second flat part in a cross-sectional view. ### Claim 18 (depends on 17) The solid-state imaging device of claim 17, wherein a fourth flat part of the semiconductor substrate is disposed between the second flat part and the third flat part, and wherein the fourth flat part is parallel to the first flat part and the second flat part in the cross-sectional view. ### Claim 19 (depends on 18) The solid-state imaging device of claim 18, further comprising: a third concave structure disposed in the first surface and between the third flat part and the fourth flat part. ### Claim 20 (depends on 17) The solid-state imaging device of claim 17, further comprising: a photoelectric conversion region disposed in the semiconductor substrate between the first trench and the second trench in the substrate. ### Claim 21 (depends on 20) The solid-state imaging device of claim 20, wherein the first concave structure and the second concave structure are disposed above the photoelectric conversion region. ### Claim 22 (depends on 17) The solid-state imaging device of claim 17, further comprising: a first insulation film disposed on first flat part and the second flat part. ### Claim 23 (depends on 22) The solid-state imaging device of claim 22, wherein the first insulation film includes silicon. ### Claim 24 (depends on 22) The solid-state imaging device of claim 22, wherein the first insulation film includes an oxide. ### Claim 25 (depends on 22) The solid-state imaging device of claim 22, wherein the first insulation film includes silicon oxide. ### Claim 26 (depends on 22) The solid-state imaging device of claim 22, further comprising: a second insulation film disposed between the first insulation film and the first flat part and the second part. ### Claim 27 (depends on 26) The solid-state imaging device of claim 26, wherein the second insulation film has a negative fixed charge. ### Claim 28 (depends on 26) The solid-state imaging device of claim 26, wherein the second insulation film includes an oxide. ### Claim 29 (depends on 28) The solid-state imaging device of claim 28, wherein the second insulation film includes hafnium oxide or tantalum oxide. ### Claim 30 A method of manufacturing a solid-state imaging device comprising: forming a first trench and a second trench in a surface of a substrate at a light incident side of the substrate; and forming a first concave structure and a second concave structure in the surface of the substrate and between the first trench and the second trench, wherein depths of the first concave structure and the second concave structure are shallower than depths of the first trench and the second trench, and wherein the forming the first concave structure and the second concave structure forms a first flat part, a second flat part, and a third flat part of the substrate, wherein the third flat part is parallel to the first flat part and second flat part, and wherein the first flat part is between the third flat part and the first trench. ### Claim 31 (depends on 30) The method of claim 30, wherein the forming the first trench and the second trench and the forming the first concave structure and the second concave structure include dry etching. ### Claim 32 (depends on 30) The method of claim 30, further comprising: forming an anti-reflective film in the first and second trenches and in the first and second concave structures. ### Claim 33 (depends on 32) The method of claim 32, further comprising: forming an insulation film on the light shielding film such that the insulation film is in the first and second trenches and in the first and second concave structures. ### Claim 34 (depends on 33) The method of claim 33, further comprising: forming a light shielding film on the insulation film such that the light shielding film overlaps at least a portion of the first flat part in a cross-sectional view.