# US 2019/0174033 A1 · Solid-state imaging device and method for manufacturing the same, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0174033 A1 - Document ID: US20190174033A1 - Status: Published application - Kind: A1 - Application number: 16/251,531 - Filed: 2019-01-18 - Published: 2019-06-06 - Earliest claimed: 2013-07-03 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yoshiaki MASUDA; Yuki MIYANAMI; Hideshi ABE; Tomoyuki HIRANO; Masanari YAMAGUCHI; Yoshiki EBIKO; Kazufumi WATANABE; Tomoharu OGITA - Web page: https://patentgrep.com/patent/US20190174033A1 ## CPC - H04N 25/633: by using optical black pixels - G02B 1/118: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures - H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/62: Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/8067: {Reflectors} - H10F 39/807: {Pixel isolation structures} - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type. ## Claims ### Claim at position 1 1-16. (canceled) ### Claim 17 A light detecting device, comprising: a semiconductor substrate including: a first photoelectric conversion region; a second photoelectric conversion region adjacent to the first photoelectric conversion region; and a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross sectional view, a light blocking element including a first portion disposed in the trench and a second portion disposed above the semiconductor substrate; a first moth-eye structure on a light receiving side of the semiconductor substrate and disposed over the first photoelectric conversion region; and a second moth-eye structure on the light receiving side of the semiconductor substrate and disposed over the second photoelectric conversion region. ### Claim 18 (depends on 17) The light detecting device of claim 17, wherein the light blocking element includes at least one of a tungsten, aluminum, or copper. ### Claim 19 (depends on 17) The light detecting device of claim 17, wherein the light blocking element includes tungsten. ### Claim 20 (depends on 17) The light detecting device of claim 17, wherein the light blocking element includes aluminum. ### Claim 21 (depends on 18) The light detecting device of claim 18, wherein the first portion is integrally formed with the second portion. ### Claim 22 (depends on 17) The light detecting device of claim 17, further comprising a transparent insulation film, wherein the transparent insulation film is disposed above the first photoelectric conversion region and the second photoelectric conversion region in a cross sectional view. ### Claim 23 (depends on 22) The light detecting device of claim 22, wherein the transparent insulation film is disposed above the first photoelectric conversion region, the second photoelectric conversion region, and the trench in the cross sectional view. ### Claim 24 (depends on 23) The light detecting device of claim 23, further comprising an anti-reflection film disposed between the transparent insulation film and the semiconductor substrate in the cross sectional view. ### Claim 25 (depends on 24) The light detecting device of claim 24, wherein the anti-reflection film includes a first oxide film, a second oxide film, and a third oxide film, and wherein the first oxide film is disposed between the transparent insulation film and the second oxide film, the second oxide film is disposed between the first oxide film and the third oxide film, and the third oxide film is disposed between the second oxide film and the semiconductor substrate in the cross sectional view. ### Claim 26 (depends on 25) The light detecting device of claim 25, wherein the first oxide film includes a silicon oxide, the second oxide film includes aluminum oxide, and the third oxide film includes hafnium oxide. ### Claim 27 (depends on 24) The light detecting device of claim 24, wherein the anti-reflection film is disposed in the trench. ### Claim 28 (depends on 27) The light detecting device of claim 27, wherein the anti-reflection film includes a first oxide film, a second oxide film, and a third oxide film, and wherein the first oxide film is disposed between the first portion and the second oxide film, the second oxide film is disposed between the first oxide film and the third oxide film, and the third oxide film is disposed between the second oxide film and a side wall of the semiconductor substrate in the cross sectional view. ### Claim 29 (depends on 28) The light detecting device of claim 28, wherein the first oxide film includes silicon oxide, the second oxide film includes aluminum oxide, and the third oxide film includes hafnium oxide. ### Claim 30 (depends on 17) The light detecting device of claim 17, wherein the semiconductor substrate includes a first flat portion and a second flat portion, the first flat portion being between the trench and the first moth-eye structure, and the second flat portion being between the trench and the second moth-eye structure. ### Claim 31 A light detecting device, comprising: a semiconductor substrate including a first photoelectric conversion region; a second photoelectric conversion region adjacent to the first photoelectric conversion region; and a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross sectional view, a light blocking element including a first portion disposed in the trench and a second portion disposed above the semiconductor substrate; a first uneven structure on a light receiving side of the semiconductor substrate and disposed over the first photoelectric conversion region; and a second uneven structure on the light receiving side of the semiconductor substrate and disposed over the second photoelectric conversion region.