# US 2019/0173469 A1 · Transistor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0173469 A1 - Document ID: US20190173469A1 - Status: Published application - Kind: A1 - Application number: 15/861,050 - Filed: 2018-01-03 - Published: 2019-06-06 - Earliest claimed: 2017-12-06 - Assignees: Nanya Technology Corporation - Applicants: Nanya Technology Corporation - Inventors: Shih-Ting Lin; Jhen-Yu Tsai - Web page: https://patentgrep.com/patent/US20190173469A1 ## CPC - H10D 64/511: {for IGFETs} - H10D 30/6706: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)} - H10D 30/6711: {by using electrodes contacting the supplementary regions or layers} - H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes} - H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes} - H10D 64/013: {of electrodes having a conductor capacitively coupled to a semiconductor by an insulator} - H10D 64/01324: {characterised by the sectional shape, e.g. T or inverted-T} - H10D 64/257: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)} - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present disclosure provides a transistor device. The transistor device includes an active region surrounded by an isolation structure, a gate structure disposed over the active region and the isolation structure, and a source/drain disposed in the active region. The gate structure includes a body portion extending in a first direction, a head portion extending in a second direction, and a pair of wing portions disposed at two opposite sides of the body portion. The first direction and the second direction are perpendicular to each other. Each of the wing portions is in contact with the head portion and the body portion. ## Claims ### Claim 1 A transistor device comprising: an active region surrounded by an isolation structure; a gate structure disposed over the active region and the isolation structure, the gate structure comprising: a body portion extending in a first direction, wherein the body portion is rectangular without a notch; a head portion extending in a second direction perpendicular to the first direction; and a pair of wing portions disposed at two opposite sides of the body portion, wherein each of the wing portions is in contact with the head portion and the body portion; and a source/drain disposed in the active region. ### Claim 2 (depends on 1) The transistor device of claim 1, wherein the head portion comprises a first side extending in the first direction, the body portion comprises a second side extending in the first direction, and each of the wing portions comprises a third side being in contact with the first side of the head portion and the second side of the body portion. ### Claim 3 (depends on 2) The transistor device of claim 2, wherein the second side of the body portion and the third side of the wing portion form an included angle, and the included angle is an obtuse angle. ### Claim 4 (depends on 3) The transistor device of claim 3, wherein the included angle is between 130° and 165°. ### Claim 5 (depends on 1) The transistor device of claim 1, wherein a portion of the head portion over the active region and the wing portion comprise a first length, and a portion of the body portion over the active region comprises a second length. ### Claim 6 (depends on 5) The transistor device of claim 5, wherein a ratio of the first length to the second length is between 1:3 and 1:12. ### Claim 7 (depends on 2) The transistor device of claim 2, wherein the third sides of the wing portions and the second side of the body portion are in contact with an edge of the source/drain. ### Claim 8 (depends on 1) The transistor device of claim 1, wherein a portion of the head portion of the gate structure overlaps the isolation structure, and a portion of the body portion of the gate structure overlaps the isolation structure. ### Claim 9 (depends on 1) The transistor device of claim 1, wherein a width of the head portion is greater than a width of the body portion. ### Claim 10 A transistor device comprising: an active region surrounded by an isolation structure; a gate structure disposed over the active region and the isolation structure, the gate structure comprising: a body portion extending in a first direction; a first head portion and a second head portion extending in a second direction perpendicular to the first direction, wherein the first head portion and the second head portion are disposed at two opposite ends of the body portion; a pair of first wing portions disposed at two opposite sides of the body portion, wherein each of the first wing portions is in contact with the first head portion and the body portion; and a pair of second wing portions disposed at two opposite sides of the body portion, wherein each of the second wing portions is in contact with the second head portion and the body portion; and a source/drain disposed in the active region. ### Claim 11 (depends on 10) The transistor device of claim 10, wherein the first head portion comprises a first side extending in the first direction, the body portion comprises a second side extending in the first direction, and the second head portion comprises a third side extending in the first direction. ### Claim 12 (depends on 11) The transistor device of claim 11, wherein each of the first wing portions comprises a fourth side in contact with the first side of the first head portion and the second side of the body portion, and each of the second wing portions comprises a fifth side in contact with the third side of the second head portion and the second side of the body portion. ### Claim 13 (depends on 12) The transistor device of claim 12, wherein the second side of the body portion and the fourth side of the first wing portion form a first included angle, the second side of the body portion and the fifth side of the second wing portion form a second included angle, and the first included angle and the second included angle are obtuse angles. ### Claim 14 (depends on 12) The transistor device of claim 12, wherein the second side of the body portion, the fourth sides of the first wing portions and the fifth sides of the second wing portions are in contact with an edge of the source/drain. ### Claim 15 (depends on 10) The transistor device of claim 10, wherein the first included angle and the second included angle are between 130° and 165°, respectively. ### Claim 16 (depends on 11) The transistor device of claim 11, wherein a portion of the first head portion over the active region and the first wing portion comprise a first length, the body portion comprises a second length, and a portion of the second head portion over the active region and the second wing portion comprise a third length. ### Claim 17 (depends on 16) The transistor device of claim 16, wherein a ratio of the first length, the second length and the third length is between 1:3:1 and 1:12:1. ### Claim 18 (depends on 10) The transistor device of claim 10, wherein a portion of the first head portion and a portion of the second head portion each overlaps a portion of the isolation structure. ### Claim 19 (depends on 10) The transistor device of claim 10, wherein the first wing portions are spaced apart from the second wing portions. ### Claim 20 (depends on 10) The transistor device of claim 10, wherein a width of the first head portion and a width of the second head portion are greater than a width of the body portion.