# US 2019/0173450 A1 · Micromechanical resonator

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- Number: US 2019/0173450 A1
- Document ID: US20190173450A1
- Status: Published application
- Kind: A1
- Application number: 16/313,655
- Filed: 2017-06-29
- Published: 2019-06-06
- Earliest claimed: 2016-07-01
- Assignees: Teknologian tutkimuskeskus VTT Oy
- Applicants: Teknologian Tutkimuskeskus Vtt Oy
- Inventors: Antti JAAKKOLA; Panu PEKKO
- Web page: https://patentgrep.com/patent/US20190173450A1

## CPC

- H03H 9/02448: {of temperature influence}
- H03H 9/02338: {Suspension means}
- H03H 9/1057: {for microelectro-mechanical devices}
- H03H 9/2405: {of microelectro-mechanical resonators}
- H03H 9/2447: {Beam resonators (H03H9/2468 takes precedence)}
- H03H 2009/02385: {Anchors for square resonators, i.e. resonators comprising a square vibrating membrane}
- H03H 2009/02527: {Combined}
- H03H 2009/2442: {Square resonators}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length (l1) and a width (w1) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (41, 43). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side (42) of the resonator element. The first location divides the width (w1) of the resonator element into a larger portion (w3) and a smaller portion (w2) such that a ratio between said smaller portion (w2) and the whole width (w1) is in a range of 0.10 to 0.28. The second location is at a longer side (44). The second location divides the length (l1) of the resonator element into a larger portion (l3) and a smaller portion (l2) such that a ratio between said smaller portion (l2) and the whole length (l1) is in a range of 0.36 to 0.48.

## Claims

### Claim 1

A micromechanical resonator comprising a resonator element having a length and a width that is perpendicular to the length, wherein
the resonator element comprises a first layer structure that comprises a base layer made of a semiconductor material,
the length of the resonator element extends along a crystalline direction of the semiconductor material,
the resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2.
the resonator element is suspended to a support structure with two or more anchors, wherein each of the two or more anchors is attached to:
a) a first location at a shorter, widthwise side of the resonator element, wherein the first location divides the width of the resonator element into a larger portion and a smaller portion such that a ratio between said smaller portion and the whole width is in a range of 0.10 to 0.28 or
b) a second location at a longer, lengthwise side of the resonator, wherein the second location divides the length of the resonator element into a larger portion and a smaller portion such that a ratio between said smaller portion and the whole length is in a range of 0.36 to 0.50.

### Claim 2 (depends on 1)

A resonator according to claim 1, wherein the two or more anchors comprise
one or more pairs of anchors, wherein the anchors in each pair are in a two-fold rotational symmetry on the resonator element.

### Claim 3 (depends on 1)

A resonator according to claim 1, wherein the resonator element is a compound structure further comprising
a second layer structure on top of the first layer structure, wherein linear temperature coefficients of the first layer structure and the second layer structure have opposite signs.

### Claim 4 (depends on 1)

A resonator according to claim 1, wherein the semiconductor material is silicon.

### Claim 5 (depends on 4)

A resonator according to claim 4, wherein the silicon is doped with a n-type dopant.

### Claim 6 (depends on 5)

A resonator according to claim 5, wherein the doping concentration of the silicon is above 2·1019 cm−3, preferably above 1·1020 cm−3