# US 2019/0173449 A1 · Alternative temperature compensating materials to amorphous silica in acoustic wave resonators

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- Number: US 2019/0173449 A1
- Document ID: US20190173449A1
- Status: Published application
- Kind: A1
- Application number: 16/203,813
- Filed: 2018-11-29
- Published: 2019-06-06
- Earliest claimed: 2017-12-01
- Assignees: Skyworks Solutions, Inc.
- Applicants: Skyworks Solutions, Inc.
- Inventors: Michael David Hill; Peter Ledel Gammel
- Web page: https://patentgrep.com/patent/US20190173449A1

## CPC

- H03H 9/02102: {of temperature influence (cutting angles H03H9/02015)}
- H03H 9/02015: {Characteristics of piezoelectric layers, e.g. cutting angles}
- H03H 9/02834: {of temperature influence (cut angles H03H9/02543)}
- H10N 30/704: {based on piezoelectric or electrostrictive films or coatings}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

An acoustic wave device comprises a piezoelectric material and a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, Si1-x-yBxPyO2-zFz (x=y<0.04), Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, Si1-2yGaxPxO4, Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, TiNb10O29, Si1-xTixO2-yFy, Si1-x-yTixPyO2, Si1-xBxO2-yFy, Si1-x-yBxPyO2, GeO2, GeO2-yFy, Si1-xGexO2, Si1-xGexO2-yFy, Si1-x-yGexPyO2, ZnP2O6, Si1-3xZnxP2xO2, Ge1-3xZnxP2xO2, TeOx, Si1-xTexO2+y, Ge1-xTexO2+y, Si1-3x-yGeyZnxP2xO2, Si1-xPxO2-xNx, Si—O—C, Si1-2yAlxPxO4, or BeF2.

## Claims

### Claim 1

An acoustic wave device comprising:
a piezoelectric material; and
a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, Si1-x-yBxPyO2-zFz (x=y<0.04), Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, Si1-2yGaxPxO4, Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, TiNb10O29, Si1-xTixO2- yFy, Si1-x-yTixPyO2, Si1-xBxO2-yFy, Si1-x-yBxPyO2, GeO2, GeO2-yFy, Si1-xGexO2, Si1-xGexO2-yFy, Si1-x-yGexPyO2, ZnP2O6, Si1-3xZnxP2xO2, Ge1-3xZnxP2xO2, TeOx, Si1-x_TexO2+y, Ge1-xTexO2+y, Si1-3x-yGeyZnxP2xO2, Si1-xPxO2-xNx, Si—O—C, Si1-2yAlxPxO4, or BeF2.

### Claim 2 (depends on 1)

The acoustic wave device of claim 1 configured as a surface acoustic wave device.

### Claim 3 (depends on 1)

The acoustic wave device of claim 1 configured as a bulk acoustic wave device.

### Claim 4

An acoustic wave device comprising:
a piezoelectric material; and
a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, Si1-x-yBxPyO2-zFz (x=y<0.04), Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, Si1-2yGaxPxO4, Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, or TiNb10O29.

### Claim 5 (depends on 4)

The acoustic wave device of claim 4 configured as a surface acoustic wave device.

### Claim 6 (depends on 4)

The acoustic wave device of claim 4 configured as a bulk acoustic wave device.

### Claim 7 (depends on 4)

The acoustic wave device of claim 4 wherein the second material includes one or more of Si1-x-yTixPyO2-zFz (x,y,z<0.1), Si1-x-yGexPyO2-zFz, or Si1-x-yBxPyO2-zFz (x=y<0.04).

### Claim 8 (depends on 4)

The acoustic wave device of claim 4 wherein the second material includes one or more of Si1-3xZnxP2xO2-yFy, Si1-xPxO2-yFy, or Si1-2yGaxPxO4.

### Claim 9 (depends on 4)

The acoustic wave device of claim 4 wherein the second material includes one or more of Si1-2yGay-xBxPyO4, Si1-2yGay-xBxPyO4-zFz, or TiNb10O29.

### Claim 10

An acoustic wave device comprising:
a piezoelectric material; and
a second material disposed on the piezoelectric material and having a temperature coefficient of frequency of a sign opposite a sign of a temperature coefficient of frequency of the piezoelectric material, the second material including one or more of Si1-xTixO2-yFy, Si1-x-yTixPyO2, Si1-xBxO2-yFy, Si1-x-yBxPyO2, GeO2, GeO2-yFy, Si1-xGexO2, Si1-xGexO2-yFy, Si1-x-yGexPyO2, ZnP2O6, Si1-3xZnxP2xO2, Ge1-3xZnxP2xO2, TeOx, Si1-xTexO2+y, Ge1-xTexO2+y, Si1-3x-yGeyZnxP2xO2, Si1-xPxO2-xNx, Si—O—C, Si1-2yAlxPxO4, or BeF2.

### Claim 11 (depends on 10)

The acoustic wave device of claim 10 configured as a surface acoustic wave device.

### Claim 12 (depends on 10)

The acoustic wave device of claim 10 configured as a bulk acoustic wave device.

### Claim 13 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of Si1-xTixO2-yFy, Si1-x-yTixPyO2, or Si1-xBxO2-yFy.

### Claim 14 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of Si1-x-yBxPyO2, GeO2, or GeO2-yFy.

### Claim 15 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of Si1-xGexO2, Si1-xGexO2-yFy, or Si1-x-yGexPyO2.

### Claim 16 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of ZnP2O6, Si1-3xZnxP2xO2, or Ge1-3xZnxP2xO2.

### Claim 17 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of TeOx, Si1-xTexO2+y, or Ge1-xTexO2+y.

### Claim 18 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of Si1-3x-yGeyZnxP2xO2, or Si1-xPxO2-xNx.

### Claim 19 (depends on 10)

The acoustic wave device of claim 10 wherein the second material includes one or more of Si—O—C, Si1-2yAlxPxO4, or BeF2.