# US 2019/0173434 A1 · Rf power transistor circuits > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0173434 A1 - Document ID: US20190173434A1 - Status: Published application - Kind: A1 - Application number: 16/255,612 - Filed: 2019-01-23 - Published: 2019-06-06 - Earliest claimed: 2010-07-26 - Assignees: NXP USA, Inc. - Applicants: NXP USA, Inc. - Inventors: Hussain H. LADHANI; Gerard J. BOUISSE; Jeffrey K. JONES - Web page: https://patentgrep.com/patent/US20190173434A1 ## CPC - H03F 1/3205: {in field-effect transistor amplifiers} - H03F 1/0211: {with control of the supply voltage or current} - H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers} - H03F 1/3247: {using feedback acting on predistortion circuits (H03F1/3264 takes precedence)} - H03F 1/42: Modifications of amplifiers to extend the bandwidth - H03F 1/565: {using inductive elements} - H03F 3/193: with field-effect devices (H03F3/195 takes precedence) - H03F 3/21: with semiconductor devices only {(H03F3/245 takes precedence)} - H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)} - H03F 3/265: {with field-effect transistors only} - H03F 3/04: with semiconductor devices only - H03F 2200/225: the input circuit of an amplifying stage comprising an LC-network - H03F 2200/391: the output circuit of an amplifying stage comprising an LC-network - H03F 2200/451: the amplifier being a radio frequency amplifier - H03F 2203/21106: An input signal being distributed in parallel over the inputs of a plurality of power amplifiers - H03F: AMPLIFIERS ## Abstract A radio frequency (RF) power transistor circuit includes a power transistor and at least one decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, and a current electrode for providing an RF output signal at an output terminal. A decoupling circuit is coupled between the control electrode and a ground terminal, and/or between the current electrode and the ground terminal. The decoupling circuit includes a resistor coupled in series with components of a resonant circuit having a resonance that is lower than an RF frequency (e.g., lower than 20 megahertz). The resistor is for dampening the resonance of the resonant circuit. ## Claims ### Claim 1 A radio frequency (RF) power transistor circuit comprising: an RF input terminal; an RF output terminal; a power transistor having a control electrode for receiving an RF input signal, and a current electrode for providing an RF output signal, wherein the control electrode is coupled to the RF input terminal, and the current electrode is coupled to the RF output terminal; a first node coupled to the current electrode; a second node coupled to the control electrode; a ground terminal; a first inductance with a first end coupled to the current electrode and a second end coupled to the first node; a first capacitor with a first electrode coupled to the first node and a second electrode coupled to the ground terminal; a first decoupling circuit coupled between the first node and the ground terminal, wherein the first decoupling circuit includes a first resistor coupled in series with components of a first resonant circuit having a resonance that is lower than an RF frequency; and a second decoupling circuit coupled between the second node and the ground terminal, wherein the second decoupling circuit includes a second resistor coupled in series with components of a second resonant circuit having a resonance that is lower than the RF frequency. ### Claim 2 (depends on 1) The RF power transistor circuit of claim 1, wherein the components of the first resonant circuit comprise: a second inductance and a second capacitor coupled in series between the first node and the ground terminal. ### Claim 3 (depends on 1) The RF power transistor circuit of claim 1, wherein the components of the second resonant circuit comprise: a second inductance and a second capacitor coupled in series between the second node and the ground terminal. ### Claim 4 A radio frequency (RF) power transistor circuit comprising: an RF output terminal; a first node; a ground terminal; a power transistor having a control electrode for receiving an RF input signal, and a current electrode for providing an RF output signal, wherein the current electrode is coupled to the RF output terminal and to the first node; and a first decoupling circuit coupled between the first node and the ground terminal, wherein the first decoupling circuit includes a first resistor coupled in series with components of a first resonant circuit having a resonance that is lower than an RF frequency. ### Claim 5 (depends on 4) The RF power transistor circuit of claim 4, wherein the components of the first resonant circuit comprise: a first inductance and a first capacitor coupled in series between the first node and the ground terminal. ### Claim 6 (depends on 5) The RF power transistor circuit of claim 5, wherein a capacitance value of the first capacitor is in a range of 10 nano Farads to 1,000 nano Farads. ### Claim 7 (depends on 5) The RF power transistor circuit of claim 5, wherein an inductance value of the first inductance is in a range of 0.1 nano Henrys to 3 nano Henrys. ### Claim 8 (depends on 5) The RF power transistor circuit of claim 5, wherein the components of the first resonant circuit further comprise: a second inductance coupled in series with the first resistor, the first inductance, and the first capacitor between the first node and the ground terminal. ### Claim 9 (depends on 5) The RF power transistor circuit of claim 5, further comprising: a second node, wherein the first inductance and the first resistor are coupled in series between the second node and a first electrode of the first capacitor, and wherein a second electrode of the first capacitor is coupled to the ground terminal; and a second capacitor coupled between the second node and the first electrode of the first capacitor. ### Claim 10 (depends on 4) The RF power transistor circuit of claim 4, further comprising: a first inductance with a first end coupled to the current electrode and a second end coupled to the first node; and a first capacitor with a first electrode coupled to the first node and a second electrode coupled to the ground terminal. ### Claim 11 (depends on 10) The RF power transistor circuit of claim 10, wherein: the first capacitor is a D.C. blocking capacitor. ### Claim 12 (depends on 4) The RF power transistor of claim 4, further comprising: a first inductance with a first end coupled to the current electrode and a second end coupled to the RF output terminal. ### Claim 13 (depends on 4) The RF power transistor circuit of claim 4, further comprising: an RF input terminal coupled to the control electrode; and a second decoupling circuit coupled between the control electrode and the ground terminal, wherein the second decoupling circuit includes a second resistor coupled in series with components of a second resonant circuit having a resonance that is lower than the RF frequency. ### Claim 14 (depends on 4) The RF power transistor circuit of claim 4, wherein: the first resistor is configured to dampen the resonance of the first resonant circuit. ### Claim 15 (depends on 4) The RF power transistor circuit of claim 4, wherein the resonance is lower than 20 megahertz. ### Claim 16 (depends on 4) The RF power transistor circuit of claim 4, wherein the first decoupling circuit presents a high impedance path to RF signals within a passband range of frequencies between 1.6 gigahertz to 3.7gigahertz. ### Claim 17 (depends on 4) The RF power transistor circuit of claim 4, wherein a resistance value of the first resistor is in a range of 0.5 ohms to 5 ohms. ### Claim 18 (depends on 4) The RF power transistor circuit of claim 4, wherein: the RF power transistor is a field effect transistor, the control electrode is a gate of the field effect transistor, and the current electrode is a drain of the field effect transistor. ### Claim 19 A radio frequency (RF) power transistor circuit comprising: an RF input terminal; a ground terminal; a power transistor having a control electrode for receiving an RF input signal, and a current electrode for providing an RF output signal, wherein the control electrode is coupled to the RF input terminal; a first node coupled to the control electrode; and a first decoupling circuit coupled between the first node and the ground terminal, wherein the first decoupling circuit includes a first resistor coupled in series with components of a first resonant circuit having a resonance that is lower than an RF frequency. ### Claim 20 (depends on 19) The RF power transistor circuit of claim 19, wherein the components of the first resonant circuit comprise: a first inductance and a first capacitor coupled in series between the first node and the ground terminal. ### Claim 21 (depends on 19) The RF power transistor circuit of claim 19, further comprising: a second node coupled to the current electrode; and a second decoupling circuit coupled between the second node and the ground terminal, wherein the second decoupling circuit includes a second resistor coupled in series with components of a second resonant circuit having a resonance that is lower than the RF frequency. ### Claim 22 (depends on 21) The RF power transistor circuit of claim 21, further comprising: a first inductance with a first end coupled to the current electrode and a second end coupled to the second node; and a first capacitor with a first electrode coupled to the second node and a second electrode coupled to the ground terminal.