# US 2019/0173431 A1 · Amplifiers with in-package radial stub harmonic traps > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0173431 A1 - Document ID: US20190173431A1 - Status: Published application - Kind: A1 - Application number: 15/832,470 - Filed: 2017-12-05 - Published: 2019-06-06 - Earliest claimed: 2017-12-05 - Assignees: NXP USA, Inc. - Applicants: NXP USA, Inc. - Inventors: Ramanujam SRINIDHI EMBAR; Roy MCLAREN - Web page: https://patentgrep.com/patent/US20190173431A1 ## CPC - H03F 1/0288: {using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers} - H03F 1/483: {with field-effect transistors} - H03F 1/486: {with IC amplifier blocks} - H03F 1/56: Modifications of input or output impedances, not otherwise provided for - H03F 1/565: {using inductive elements} - H03F 3/195: in integrated circuits - H03F 3/213: in integrated circuits - H03F 3/245: {with semiconductor devices only} - H03F 3/60: Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators (H03F3/54 takes precedence) - H03F 3/601: {using FET's, e.g. GaAs FET's (H03F3/607, H03F3/608 take precedence)} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/255: Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation - H03F 2200/36: the amplifier comprising means for increasing the bandwidth - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2200/423: Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation - H03F 2200/451: the amplifier being a radio frequency amplifier - H10D 1/68: Capacitors having no potential barriers - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10W 44/206: {Wires} - H10W 44/234: {Arrangements for impedance matching} - H10W 70/65: Shapes or dispositions of interconnections - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H03F: AMPLIFIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An amplifier package may include a transistor, an output impedance matching circuit and one or more radial stub harmonic traps coupled to a control terminal of the transistor or to an output terminal of the transistor. The output impedance matching circuit and the radial stub harmonic traps may be formed on a single substrate or separate substrates, which may be formed from gallium nitride. Each radial stub harmonic trap may provide a low resistance path to ground for signal energy above a fundamental operating frequency of the amplifier, such as harmonic frequencies thereof. ## Claims ### Claim 1 An amplifier package comprising: a conductive housing comprising a ground-plane; an integrated circuit die disposed on the ground-plane, the integrated circuit die comprising a transistor having a control terminal and an output terminal; and a radial stub harmonic trap formed on a substrate that is disposed on the ground-plane, wherein the radial stub harmonic trap is coupled to the transistor. ### Claim 2 (depends on 1) The amplifier package of claim 1, wherein the radial stub harmonic trap is coupled to the control terminal of the transistor. ### Claim 3 (depends on 1) The amplifier package of claim 1, wherein the radial stub harmonic trap is coupled to the output terminal of the transistor. ### Claim 4 (depends on 3) The amplifier package of claim 3, the integrated circuit die further comprising: an output impedance matching network that is tuned to a fundamental operating frequency, wherein the radial stub harmonic trap has a resonance frequency that is a harmonic of the fundamental operating frequency. ### Claim 5 (depends on 4) The amplifier package of claim 4, wherein the radial stub harmonic trap is configured to route signal energy at the resonance frequency to the ground-plane. ### Claim 6 (depends on 1) The amplifier package of claim 1, wherein the substrate is formed from a material selected from the group consisting of compound semiconductor material and glass, and wherein the radial stub harmonic trap comprises a patterned metal layer formed on the substrate. ### Claim 7 (depends on 6) The amplifier package of claim 6, wherein the substrate is formed from gallium nitride (GaN), and wherein the transistor comprises a GaN transistor. ### Claim 8 (depends on 1) The amplifier package of claim 1, wherein the radial stub harmonic trap is directly coupled to the transistor using wire-bonds. ### Claim 9 (depends on 1) The amplifier package of claim 1, further comprising: an additional radial stub harmonic trap disposed on the ground-plane, wherein the additional radial stub harmonic trap is coupled to the transistor. ### Claim 10 (depends on 9) The amplifier package of claim 9, wherein the radial stub harmonic trap has a first resonance frequency that is a second harmonic of a fundamental operating frequency of the amplifier, wherein the additional radial stub harmonic trap has a second resonance frequency that is a third harmonic of the fundamental operating frequency, wherein the radial stub harmonic trap is configured to route signal energy at the first resonance frequency to the ground-plane, and wherein the additional radial stub harmonic trap is configured to route signal energy at the second resonance frequency to the ground-plane. ### Claim 11 A packaged radio frequency (RF) amplifier device comprising: a conductive ground-plane; a substrate disposed on the ground-plane; a transistor that is formed on the substrate and that includes a control terminal and an output terminal; and a radial stub harmonic trap that is formed on the substrate and that is electrically connected to the transistor. ### Claim 12 (depends on 11) The packaged RF amplifier device of claim 11, wherein the radial stub harmonic trap is electrically connected to the control terminal of the transistor. ### Claim 13 (depends on 11) The packaged RF amplifier device of claim 11, wherein the radial stub harmonic trap is electrically connected to the output terminal of the transistor. ### Claim 14 (depends on 13) The packaged RF amplifier device of claim 13, further comprising: an output impedance matching network formed on the substrate that is tuned to a fundamental operating frequency, wherein the radial stub harmonic trap is configured to resonate at a frequency that is a harmonic of the fundamental operating frequency, and wherein the radial stub harmonic trap is further configured to route signal energy at the resonance frequency to the ground-plane. ### Claim 15 (depends on 11) The packaged RF amplifier device of claim 11, wherein the substrate is formed from gallium nitride (GaN), and wherein the radial stub harmonic trap comprises a patterned metal layer formed on a surface of the substrate. ### Claim 16 An electronic device comprising: a ground-plane; a substrate disposed on the ground-plane; a transistor that includes a control terminal and an output terminal; and a radial stub that is formed on the substrate and that is electrically connected to the transistor. ### Claim 17 (depends on 16) The electronic device of claim 16, further comprising: an output impedance matching network formed on the substrate that is tuned to a fundamental operating frequency, wherein the radial stub is electrically connected to the output terminal of the transistor, wherein the radial stub is configured to resonate at a frequency that is a harmonic of the fundamental operating frequency, and wherein the radial stub is further configured to route signal energy at the resonance frequency to the ground-plane. ### Claim 18 (depends on 17) The electronic device of claim 17, further comprising: an additional radial stub formed on the substrate, wherein the additional radial stub is coupled to the transistor in parallel with the radial stub. ### Claim 19 (depends on 18) The electronic device of claim 18, wherein the harmonic is a second harmonic of the fundamental operating frequency, wherein the additional radial stub has an additional resonance frequency that is a third harmonic of the fundamental operating frequency, wherein the additional radial stub is configured to route signal energy at the additional resonance frequency to the ground-plane. ### Claim 20 (depends on 16) The electronic device of claim 16, wherein the substrate is formed from gallium nitride, and wherein the radial stub comprises a patterned metal layer formed on the substrate.