# US 2019/0173054 A1 · Display panel and manufacturing method thereof and display device including display panel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0173054 A1 - Document ID: US20190173054A1 - Status: Published application - Kind: A1 - Application number: 16/107,676 - Filed: 2018-08-21 - Published: 2019-06-06 - Earliest claimed: 2017-12-05 - Assignees: Boe Technology Group Co., Ltd. - Applicants: Boe Technology Group Co., Ltd. - Inventors: Libin Liu; Zheng Liu - Web page: https://patentgrep.com/patent/US20190173054A1 ## CPC - G06F 3/0412: {Digitisers structurally integrated in a display} - H10D 86/40: characterised by multiple TFTs - H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/124: Insulating layers formed between TFT elements and OLED elements - H10K 59/1315: {comprising structures specially adapted for lowering the resistance} - H10K 59/8731: {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers} - G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices - H10K 59/40: OLEDs integrated with touch screens - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The present disclosure discloses a display panel, which includes a thin-film transistor arranged on a substrate, an electroluminescent diode arranged on the thin-film transistor, which includes a bottom electrode, a light emitting layer, and a top electrode, and a thin-film encapsulation layer covering the electroluminescent diode. The display panel further includes an auxiliary electrode and a lead wire of the top electrode of the electroluminescent diode. The auxiliary electrode is electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through a via hole of the thin-film encapsulation layer. Arrangements of the present disclosure provide a display panel and a manufacturing method thereof and a display device including the display panel. ## Claims ### Claim 1 A display panel, comprising: a substrate; a thin-film transistor arranged on the substrate; an electroluminescent diode arranged on the thin-film transistor, comprising a bottom electrode, a light emitting layer, and a top electrode; and a thin-film encapsulation layer covering the electroluminescent diode; wherein the display panel further comprises an auxiliary electrode, and the auxiliary electrode is electrically connected to a lead wire of the top electrode of the electroluminescent diode by penetrating through a via hole of the thin-film encapsulation layer. ### Claim 2 (depends on 1) The display panel according to claim 1, wherein the auxiliary electrode is arranged on the thin-film encapsulation layer and is electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the via hole of the thin-film encapsulation layer. ### Claim 3 (depends on 1) The display panel according to claim 1, further comprising a touch module formed on the thin-film encapsulation layer, wherein the auxiliary electrode is formed on the touch module and is electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the touch module and the via hole of the thin-film encapsulation layer. ### Claim 4 (depends on 1) The display panel according to claim 1, comprising two auxiliary electrodes, wherein one of the auxiliary electrodes is arranged on the thin-film encapsulation layer and is electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the via hole of the thin-film encapsulation layer; and the display panel further comprises a touch module formed on the thin-film encapsulation layer, and another of the auxiliary electrodes is formed on the touch module and is electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the touch module and the via hole of the thin-film encapsulation layer. ### Claim 5 (depends on 1) The display panel according to claim 1, wherein the electroluminescent diode is of a top-emission type, and a material of the lead wire of the top electrode is one of indium tin oxide (ITO), an ITO-Ag-ITO laminated layer, and metal smaller than the ITO in light transmittance but better matching a performance function of the light emitting layer of the electroluminescent diode. ### Claim 6 (depends on 1) The display panel according to claim 1, wherein the electroluminescent diode is of a bottom-emission type, and the material of the lead wire of the top electrode is metal better matching the performance function of the light emitting layer of the electroluminescent diode than the indium tin oxide (ITO). ### Claim 7 (depends on 1) The display panel according to claim 1, wherein the thin-film encapsulation layer comprises a first inorganic thin-film encapsulation layer, a second organic thin-film encapsulation layer and a third inorganic thin-film encapsulation layer arranged in a direction far away from the electroluminescent diode. ### Claim 8 (depends on 1) The display panel according to claim 1, wherein a material of the auxiliary electrode is ITO or a Ti—Al—Ti laminated layer. ### Claim 9 (depends on 1) The display panel according to claim 1, comprising a drive circuit chip region, wherein the auxiliary electrode is arranged deviating from the drive circuit chip region and encircles the display panel by 270°. ### Claim 10 A display device, comprising: a display panel, wherein the display panel comprises: a substrate; a thin-film transistor arranged on the substrate; an electroluminescent diode arranged on the thin-film transistor, comprising a bottom electrode, a light emitting layer, and a top electrode; and a thin-film encapsulation layer covering the electroluminescent diode; wherein the display panel further comprises an auxiliary electrode, and the auxiliary electrode is electrically connected to a lead wire of the top electrode of the electroluminescent diode by penetrating through a via hole of the thin-film encapsulation layer. ### Claim 11 A method for manufacturing a display panel, comprising: forming a thin-film transistor on a substrate; forming an electroluminescent diode on the thin-film transistor, the electroluminescent diode comprising a bottom electrode, a light emitting layer, and a top electrode; forming a thin-film encapsulation layer to cover the electroluminescent diode; and forming an auxiliary electrode, the auxiliary electrode being electrically connected to a lead wire of the top electrode of the electroluminescent diode by penetrating through a via hole of the thin-film encapsulation layer. ### Claim 12 (depends on 11) The method according to claim 11, wherein the forming the auxiliary electrode comprises: forming the auxiliary electrode on the thin-film encapsulation layer, the auxiliary electrode being electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the via hole of the thin-film encapsulation layer. ### Claim 13 (depends on 11) The method according to claim 11, wherein after forming the thin-film encapsulation layer, the method comprises: forming a touch module on the thin-film encapsulation layer, and the forming an auxiliary electrode comprises: forming the auxiliary electrode on the touch module so that the auxiliary electrode is electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the touch module and the via hole of the thin-film encapsulation layer. ### Claim 14 (depends on 11) The method according to claim 11, wherein the forming the auxiliary electrode comprises: forming the auxiliary electrode on the thin-film encapsulation layer, the auxiliary electrode being electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the via hole of the thin-film encapsulation layer; after forming the auxiliary electrode, the method comprises: forming a touch module on the thin-film encapsulation layer; and forming another auxiliary electrode on the touch module, the another auxiliary electrode being electrically connected to the lead wire of the top electrode of the electroluminescent diode by penetrating through the touch module and the via hole of the thin-film encapsulation layer. ### Claim 15 (depends on 11) The method according to claim 11, wherein the electroluminescent diode is of a top-emission type, and a material of the lead wire of the top electrode is one of indium tin oxide (ITO), an ITO-Ag-ITO laminated layer, and a metal smaller than the ITO in light transmittance but better matching a performance function of the light emitting layer of the electroluminescent diode. ### Claim 16 (depends on 11) The method according to claim 11, wherein the electroluminescent diode is of a bottom-emission type, and a material of the lead wire of the top electrode is a metal better matching the performance function of the light emitting layer of the electroluminescent diode than indium tin oxide (ITO). ### Claim 17 (depends on 11) The method according to claim 11, wherein the thin-film encapsulation layer comprises a first inorganic thin-film encapsulation layer, a second organic thin-film encapsulation layer and a third inorganic thin-film encapsulation layer arranged in a direction far away from the electroluminescent diode.