# US 2019/0172979 A1 · Method of producing optoelectronic components and optoelectronic component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0172979 A1 - Document ID: US20190172979A1 - Status: Published application - Kind: A1 - Application number: 16/205,412 - Filed: 2018-11-30 - Published: 2019-06-06 - Earliest claimed: 2017-12-04 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Markus Richter; Christian Gatzhammer - Web page: https://patentgrep.com/patent/US20190172979A1 ## CPC - H10H 20/8506: {Containers} - H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H10H 20/852: Encapsulations - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 30/6219: {characterised by the source or drain electrodes} - H10H 20/036: {of packages} - H10H 20/0362: {of encapsulations} - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/853: characterised by their shape - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A method of producing an optoelectronic component includes providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip including a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip. ## Claims ### Claim 1 A method of producing an optoelectronic component comprising: providing a carrier, generating a plurality of recesses in the carrier, applying a plurality of drops of a cover material to the carrier, introducing an optoelectronic semiconductor chip comprising a semiconductor body and contact elements on an underside of the semiconductor body into at least some of the drops, and curing the drops of the cover material into cover bodies, wherein at least some of the drops are completely surrounded by recesses in the carrier, and the recesses in the carrier are a stop edge for the cover material during introduction of the optoelectronic semiconductor chip. ### Claim 2 (depends on 1) The method according to claim 1, wherein an edge on the underside of the semiconductor body is a further stop edge for the cover material. ### Claim 3 (depends on 1) The method according to claim 1, wherein a shape of an outer surface of the cover body is adjustable by changing at least one value: relation of volume of the cover material to volume of the semiconductor body, distance of a side surface of the semiconductor body to the closest recess, viscosity of the cover material, material and surface condition of the carrier. ### Claim 4 (depends on 1) The method according to claim 1, wherein the recesses partially penetrate the carrier. ### Claim 5 (depends on 1) The method according to claim 1, wherein the recesses completely penetrate the carrier. ### Claim 6 (depends on 1) The method according to claim 1, wherein a further cover body is arranged on the outer surfaces of the cover body, on the underside of the semiconductor body and on an underside of the carrier. ### Claim 7 (depends on 1) The method according to claim 1, wherein the carrier is detached from the optoelectronic semiconductor chip. ### Claim 8 (depends on 1) The method according to claim 1, wherein a further carrier is applied to an upper side of the optoelectronic semiconductor chip facing away from the underside. ### Claim 9 An optoelectronic component comprising: an optoelectronic semiconductor chip comprising a semiconductor body and contact elements on an underside of the semiconductor body, and a cover body formed with a radiation-transmissive material, wherein the cover body covers side surfaces of the semiconductor body, the cover body terminates flush with the underside of the semiconductor body, the cover body wets the semiconductor body at least in places on an upper side facing away from the underside, and the cover body is shaped convexly on a side facing away from the side surfaces of the semiconductor body. ### Claim 10 (depends on 9) The optoelectronic component according to claim 9, wherein an outer surface of the cover body extends in a curved manner on a side facing away from the side surfaces of the semiconductor body. ### Claim 11 (depends on 9) The optoelectronic component according to claim 9, wherein a thickness of the cover body on the upper side of the semiconductor body is at most 3 μm. ### Claim 12 (depends on 11) The optoelectronic component according to claim 11, wherein a capping body covers the semiconductor body and the cover body. ### Claim 13 (depends on 12) The optoelectronic component according to claim 12, wherein the cover body provides adhesion of semiconductor body and capping body. ### Claim 14 (depends on 12) The optoelectronic component according to claim 12, wherein a further cover body at least partially covers the cover body, the semiconductor chip and/or the capping body, and the further cover body is formed to be reflective for electromagnetic radiation. ### Claim 15 (depends on 14) The optoelectronic component according to claim 14, wherein the further cover body terminates flush with the contact elements on the side facing away from the semiconductor body. ### Claim 16 (depends on 12) The optoelectronic component according to claim 12, wherein the capping body projects laterally beyond a top surface of the semiconductor body and a top surface of the cover body or terminates laterally flush with the top surface of the cover body. ### Claim 17 (depends on 12) The optoelectronic component according to claim 12, wherein the capping body, which is not covered by the top surface of the semiconductor body and of the cover body, has recesses on a side facing the cover body. ### Claim 18 (depends on 9) The optoelectronic component according to claim 9, wherein the contact elements are freely accessible.