# US 2019/0172970 A1 · Optoelectronic device comprising three-dimensional diodes

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- Number: US 2019/0172970 A1
- Document ID: US20190172970A1
- Status: Published application
- Kind: A1
- Application number: 16/313,749
- Filed: 2017-06-26
- Published: 2019-06-06
- Earliest claimed: 2016-06-30
- Assignees: Aledia; Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Aledia; Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Inventors: Florian DUPONT; Benoit AMSTATT; Vincent BEIX; Thomas LACAVE; Philippe GILET; Ewen HENAFF; Berangere HYOT; Hubert BONO
- Web page: https://patentgrep.com/patent/US20190172970A1

## CPC

- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10F 39/107: {having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays}
- H10F 71/1276: {comprising growth substrates not made of Group III-V materials}
- H10F 71/1278: {comprising nitrides, e.g. GaN}
- H10F 77/1246: {III-V nitrides, e.g. GaN}
- H10F 77/147: {Shapes of bodies}
- H10F 77/206: {for devices having potential barriers}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/933: {for devices having potential barriers}
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/833: Transparent materials
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10F 77/1437: {Quantum wires or nanorods}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/818: within the light-emitting regions
- H10H 20/8314: {extending at least partially onto an outer side surface of the bodies}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

## Claims

### Claim 1

An optoelectronic device, comprising:
a support including a rear surface and a front surface opposite each other;
a plurality of nucleation conductive strips forming first polarization electrodes, distinct from each other and resting on the front surface, made of an electrically conductive material configured for the growth of first doped regions of diodes;
an intermediate insulating layer covering the nucleation conductive strips, and including through-openings opening onto the nucleation conductive strips;
a plurality of diodes, each of the plurality of diodes including a first three-dimensional doped region and a second doped region disposed to form a p-n junction, the first doped regions being in contact with the nucleation conductive strips through the through-openings and extending along a longitudinal axis substantially orthogonal to the front surface; and
a plurality of top conductive strips forming second polarization electrodes, distinct from each other and resting on the intermediate insulating layer, each top conductive strip being disposed to be in contact with second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.

### Claim 2 (depends on 1)

The optoelectronic device as claimed in claim 1, wherein the support includes an electrically insulating substrate, a top surface of the electrically insulating substrate forming the front surface, or includes a semiconductor or electrically conductive layer or substrate coated with a bottom insulating layer, one surface of which forms the front surface.

### Claim 3 (depends on 1)

The optoelectronic device as claimed in claim 1, wherein each nucleation conductive strip extends longitudinally on the front surface and is electrically separated from its neighbors, transversely, by the intermediate insulating layer.

### Claim 4 (depends on 1)

The optoelectronic device as claimed in claim 1, wherein each top conductive strip extends longitudinally on the intermediate insulating layer, and is electrically separated from its neighbors, transversely, by a top insulating layer.

### Claim 5 (depends on 1)

The optoelectronic device as claimed in claim 1, wherein the top conductive strips are made of an at least partially transparent conductive material and at least partially cover the second doped regions.

### Claim 6 (depends on 5)

The optoelectronic device as claimed in claim 5, wherein each top conductive strip includes portions covering the second doped regions of a set of diodes, the covering portions being connected to each other by connecting parts resting on the intermediate insulating layer.

### Claim 7 (depends on 6)

The optoelectronic device as claimed in claim 6, wherein the connecting parts of the top conductive strips are at least partially coated with a metal layer.

### Claim 8 (depends on 1)

The optoelectronic device as claimed in claim 1, further comprising:
at least one of first connection pads and second connection pads, the first connection pads resting on the rear surface and electrically connected to the nucleation conductive strips by first openings passing through the support and filled with a conductive material, and the second connection pads resting on the rear surface and electrically connected to the top conductive strips by second openings passing through the support and the intermediate insulating layer and filled with a conductive material.

### Claim 9 (depends on 1)

The optoelectronic device as claimed in claim 1, further comprising:
a control integrated circuit assembled to the support and electrically connected to the nucleation conductive strips and the top conductive strips, configured to apply a potential difference, sequentially, to different subsets of diodes, the one or more diodes of a same subset being in contact with a same nucleation conductive strip and a same top conductive strip, the one or more diodes of different subsets of diodes being in contact with at least one of different nucleation conductive strips and different top conductive strips.

### Claim 10 (depends on 1)

The optoelectronic device as claimed in claim 1, wherein at least one diode in contact with a first nucleation conductive strip and a first top conductive strip is connected in series with at least one other diode, the latter being in contact with a second nucleation conductive strip distinct from the first nucleation strip and a second top conductive strip distinct from the first top strip.

### Claim 11 (depends on 1)

The optoelectronic device as claimed in claim 1, wherein the support includes a substrate made of a monocrystalline material that forms a top surface, on which rests a bottom insulating layer made of a dielectric material epitaxially grown from the top surface of the substrate and forming an opposing top surface, the nucleation conductive strips being made of a material comprising a transition metal forming a crystalline nucleation material, epitaxially grown from the top surface of the bottom insulating layer and forming a nucleation surface on which the first doped regions of the diodes are in contact.

### Claim 12 (depends on 11)

The optoelectronic device as claimed in claim 11, wherein the material of the bottom insulating layer is selected from aluminum nitride and oxides of aluminum, titanium, hafnium, magnesium and zirconium, and has a hexagonal, face-centered cubic, or orthorhombic crystalline structure.

### Claim 13 (depends on 11)

The optoelectronic device as claimed in claim 11, wherein the material of the nucleation conductive strips is selected from titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, or from a nitride or a carbide of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten, and has a hexagonal or face-centered cubic crystalline structure, or is a gallium-nitride-based material.

### Claim 14 (depends on 11)

The optoelectronic device as claimed in claim 11, wherein the monocrystalline material of the substrate is selected from a group III-V compound, a group II-VI compound, or a group IV element or compound and has a hexagonal or face-centered cubic crystalline structure.

### Claim 15 (depends on 1)

A method for producing the optoelectronic device as claimed in claim 1, comprising:
epitaxial growing of the nucleation conductive strips by sputtering at a growth temperature between room temperature and 500° C.