# US 2019/0172969 A1 · Semiconductor light-emitting array and method of manufacturing the same

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- Number: US 2019/0172969 A1
- Document ID: US20190172969A1
- Status: Published application
- Kind: A1
- Application number: 16/208,901
- Filed: 2018-12-04
- Published: 2019-06-06
- Earliest claimed: 2017-12-04
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Junghun PARK; Junhee CHOI
- Web page: https://patentgrep.com/patent/US20190172969A1

## CPC

- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/85: Packages
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Provided are a semiconductor light-emitting array and a method of manufacturing the same. The manufacturing method includes forming a plurality of grooves in a region of a substrate and sequentially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate to form a light-emitting structure layer.

## Claims

### Claim 1

A method of manufacturing a semiconductor light-emitting array, the manufacturing method comprising:
forming a plurality of grooves on a substrate; and
forming a light-emitting structure layer by sequentially growing a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the plurality of grooves are formed one-dimensionally or two-dimensionally.

### Claim 3 (depends on 1)

The method of claim 1, wherein the plurality of grooves have point shapes and are spaced apart from one another.

### Claim 4 (depends on 1)

The method of claim 1, wherein the plurality of grooves have linear shapes and are spaced apart from one another.

### Claim 5 (depends on 1)

The method of claim 1, wherein the plurality of grooves have a mesh structure.

### Claim 6 (depends on 1)

The method of claim 1, wherein a thickness of the substrate is 10 mm or less.

### Claim 7 (depends on 1)

The method of claim 1, wherein a depth of the grooves is 15 μm or less.

### Claim 8 (depends on 1)

The method of claim 1, wherein a maximum width of the grooves is 15 μm or less.

### Claim 9 (depends on 1)

The method of claim 1, wherein the plurality of grooves are formed by a physical or a mechanical process.

### Claim 10 (depends on 1)

The method of claim 1, wherein the plurality of grooves are formed by dicing or dry etching.

### Claim 11 (depends on 1)

The method of claim 1, further comprising: forming one or more grooves in one or more regions of the light-emitting structure layer corresponding to the grooves formed on the substrate.

### Claim 12 (depends on 1)

The method of claim 1, wherein the light-emitting structure layer is formed by epitaxial growth.

### Claim 13 (depends on 1)

The method of claim 1, wherein the substrate is a sapphire substrate.

### Claim 14 (depends on 1)

The method of claim 1, wherein the light-emitting structure layer includes a nitride-based semiconductor material.

### Claim 15

A semiconductor light-emitting array comprising:
a substrate in which a plurality of grooves are formed; and
a light-emitting structure layer sequentially arranged on the substrate, the light-emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer.

### Claim 16 (depends on 15)

The semiconductor light-emitting array of claim 15, wherein the plurality of grooves have linear shapes and are spaced apart from one another.

### Claim 17 (depends on 15)

The semiconductor light-emitting array of claim 15, wherein the plurality of grooves have a mesh structure.

### Claim 18 (depends on 15)

The semiconductor light-emitting array of claim 15, wherein a thickness of the substrate is 10 mm or less.

### Claim 19 (depends on 15)

The semiconductor light-emitting array of claim 15, wherein a depth of the grooves is 15 μm or less.

### Claim 20 (depends on 15)

The semiconductor light-emitting array of claim 15, further comprising: one or more grooves formed in in one or more regions of the light-emitting structure layer corresponding to the grooves formed on the substrate.