# US 2019/0172956 A1 · Imaging device

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- Number: US 2019/0172956 A1
- Document ID: US20190172956A1
- Status: Published application
- Kind: A1
- Application number: 16/255,090
- Filed: 2019-01-23
- Published: 2019-06-06
- Earliest claimed: 2013-04-10
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Toshiki MORIWAKI; Toru UDAKA
- Web page: https://patentgrep.com/patent/US20190172956A1

## CPC

- H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10F 39/191: {Photoconductor image sensors}
- H10F 77/143: {comprising quantum structures}
- H10F 77/20: Electrodes
- H10K 30/81: Electrodes
- H10F 77/244: {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers}
- H10F 77/247: {comprising indium tin oxide [ITO]}
- H10K 39/32: Organic image sensors
- Y02E 10/549: Organic PV cells
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

An imaging device is provided. The imaging device includes a semiconductor substrate; a first electrode disposed above the semiconductor substrate; a second electrode disposed above the first electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode, wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and wherein the first electrode has a sheet resistance value of 3×10 Ω/□ to 1×103 Ω/□.

## Claims

### Claim 1

An imaging device, comprising:
a semiconductor substrate;
a first electrode disposed above the semiconductor substrate;
a second electrode disposed above the first electrode; and
a photoelectric conversion layer disposed between the first electrode and the second electrode,
wherein a difference between a work function value of the first electrode and a work function value of the second electrode is 0.4 eV or more, and
wherein the first electrode has a sheet resistance value of 3×10Ω/□ to 1×103Ω/□.

### Claim 2 (depends on 1)

The imaging device according to claim 1, wherein the first electrode is transparent.

### Claim 3 (depends on 1)

The imaging device according to claim 1, wherein the first electrode has light transmittance of 80% or more at wavelengths of 400 nm to 660 nm.

### Claim 4 (depends on 1)

The imaging device according to claim 1, wherein the first electrode comprises one of indium gallium complex oxide, indium-doped gallium zinc complex oxide, aluminum oxide-doped zinc oxide, indium zinc complex oxide, and gallium-doped zinc oxide.

### Claim 5 (depends on 1)

The imaging device according to claim 1, wherein the second electrode is transparent.

### Claim 6 (depends on 1)

The imaging device according to claim 1, wherein the second electrode has light transmittance of 80% or more at wavelengths of 400 nm to 660 nm.

### Claim 7 (depends on 1)

The imaging device according to claim 1, wherein the second electrode comprises one of indium tin complex oxide, indium zinc complex oxide, and tin oxide.

### Claim 8 (depends on 1)

The imaging device according to claim 1, wherein the second electrode is coated with an inorganic insulation material.

### Claim 9 (depends on 1)

The imaging device according to claim 1, wherein the second electrode is coated with a film, the film comprising one of silicon oxide, silicon nitride, and aluminum oxide.

### Claim 10 (depends on 1)

The imaging device according to claim 1, wherein a work function value of the first electrode is less than a work function value of the second electrode.

### Claim 11 (depends on 1)

The imaging device according to claim 1, wherein the first electrode has a thickness of 1×10−8 m to 1×10−7 m.

### Claim 12 (depends on 1)

The imaging device according to claim 1, further comprising a layer between the first electrode and the photoelectric conversion layer, the layer comprising one of indium gallium complex oxide, indium-doped gallium zinc complex oxide, aluminum oxide-doped zinc oxide, indium zinc complex oxide, and gallium-doped zinc oxide.

### Claim 13 (depends on 12)

The imaging device according to claim 12, wherein a ratio between a thickness of the first electrode and a thickness of the layer is 9/1 to 1/9.

### Claim 14 (depends on 1)

An electronic apparatus comprising the imaging device according to claim 1.