# US 2019/0172918 A1 · Transistor device

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- Number: US 2019/0172918 A1
- Document ID: US20190172918A1
- Status: Published application
- Kind: A1
- Application number: 16/119,349
- Filed: 2018-08-31
- Published: 2019-06-06
- Earliest claimed: 2017-12-06
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Shih-Ting Lin; Jhen-Yu Tsai
- Web page: https://patentgrep.com/patent/US20190172918A1

## CPC

- H10D 64/511: {for IGFETs}
- H10D 30/6706: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)}
- H10D 30/6711: {by using electrodes contacting the supplementary regions or layers}
- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10D 30/673: {characterised by the shapes, relative sizes or dispositions of the gate electrodes}
- H10D 64/013: {of electrodes having a conductor capacitively coupled to a semiconductor by an insulator}
- H10D 64/01324: {characterised by the sectional shape, e.g. T or inverted-T}
- H10D 64/257: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)}
- H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present disclosure provides a transistor device. The transistor device includes an active region surrounded by an isolation structure, a gate structure disposed over the active region and the isolation structure, and a source/drain disposed in the active region. The gate structure includes a body portion extending in a first direction, a head portion extending in a second direction, and a pair of wing portions disposed at two opposite sides of the body portion. The first direction and the second direction are perpendicular to each other. Each of the wing portions is in contact with the head portion and the body portion.

## Claims

### Claim 1

A transistor device comprising:
an active region surrounded by an isolation structure;
a gate structure disposed over the active region and the isolation structure, the gate structure comprising:
a body portion extending in a first direction;
a first head portion and a second head portion extending in a second direction perpendicular to the first direction, wherein the first head portion and the second head portion are disposed at two opposite ends of the body portion;
a pair of first wing portions disposed at two opposite sides of the body portion, wherein each of the first wing portions is in contact with the first head portion and the body portion; and
a pair of second wing portions disposed at two opposite sides of the body portion, wherein each of the second wing portions is in contact with the second head portion and the body portion; and
a source/drain disposed in the active region.

### Claim 2 (depends on 1)

The transistor device of claim 1, wherein the first head portion comprises a first side extending in the first direction, the body portion comprises a second side extending in the first direction, and the second head portion comprises a third side extending in the first direction.

### Claim 3 (depends on 2)

The transistor device of claim 2, wherein each of the first wing portions comprises a fourth side in contact with the first side of the first head portion and the second side of the body portion, and each of the second wing portions comprises a fifth side in contact with the third side of the second head portion and the second side of the body portion.

### Claim 4 (depends on 3)

The transistor device of claim 3, wherein the second side of the body portion and the fourth side of the first wing portion form a first included angle, the second side of the body portion and the fifth side of the second wing portion form a second included angle, and the first included angle and the second included angle are obtuse angles.

### Claim 5 (depends on 3)

The transistor device of claim 3, wherein the second side of the body portion, the fourth sides of the first wing portions and the fifth sides of the second wing portions are in contact with an edge of the source/drain.

### Claim 6 (depends on 1)

The transistor device of claim 1, wherein the first included angle and the second included angle are between 130° and 165°, respectively.

### Claim 7 (depends on 2)

The transistor device of claim 2, wherein a portion of the first head portion over the active region and the first wing portion comprise a first length, the body portion comprises a second length, and a portion of the second head portion over the active region and the second wing portion comprise a third length.

### Claim 8 (depends on 7)

The transistor device of claim 7, wherein a ratio of the first length, the second length and the third length is between 1:3:1 and 1:12:1.

### Claim 9 (depends on 1)

The transistor device of claim 1, wherein a portion of the first head portion and a portion of the second head portion each overlaps a portion of the isolation structure.

### Claim 10 (depends on 1)

The transistor device of claim 1, wherein the first wing portions are spaced apart from the second wing portions.

### Claim 11 (depends on 1)

The transistor device of claim 1, wherein a width of the first head portion and a width of the second head portion are greater than a width of the body portion.