# US 2019/0172914 A1 · P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system

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- Number: US 2019/0172914 A1
- Document ID: US20190172914A1
- Status: Published application
- Kind: A1
- Application number: 16/258,814
- Filed: 2019-01-28
- Published: 2019-06-06
- Earliest claimed: 2011-03-31
- Assignees: Ricoh Company, Ltd.
- Applicants: Ricoh Company, Ltd.
- Inventors: Yukiko ABE; Naoyuki UEDA; Yuki NAKAMURA; Shinji MATSUMOTO; Yuji SONE; Mikiko TAKADA; Ryoichi SAOTOME
- Web page: https://patentgrep.com/patent/US20190172914A1

## CPC

- H10D 30/6756: {Amorphous oxide semiconductors}
- C01F 5/06: by thermal decomposition of magnesium compounds (calcining magnesite or dolomite C04B2/10)
- C01F 11/04: by thermal decomposition
- C01G 3/02: Oxides; Hydroxides
- G09G 3/32: semiconductive, e.g. using light-emitting diodes [LED]
- H10D 62/40: Crystalline structures
- H10D 62/871: {being Group I-VI materials, e.g. Cu2O; being Group I-VII materials, e.g. CuI}
- C01P 2002/02: Amorphous compounds
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00})
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≤x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

## Claims

### Claim at position 1

1-11. (canceled)

### Claim 12

A p-type oxide, wherein the p-type oxide is represented by the following compositional formula:
xAO.yCu2O
where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, and wherein
in a case that A is any one of Mg, Ca and Ba or a mixture containing at least two selected from the group consisting of Mg, Ca, Sr and Ba, x and y satisfy the following expressions (i) and (ii):
0≤x<x<100 and (i)
x+y=100, (ii)
in a case that A is Sr only, x and y satisfy each of the following expressions (iii) and (iv):
either 0.1≤x<50 or 50<x<100; and (iii)
x+y=100 (iv)
wherein the p-type oxide has no diffraction peak between 10° and 70° by X-ray diffraction.

### Claim 13 (depends on 12)

A semiconductor device comprising:
an active layer,
wherein the active layer comprises the p-type oxide according to claim 12.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13, further comprising:
a first electrode; and
a second electrode,
wherein the semiconductor device is a diode where the active layer is formed between the first electrode and the second electrode.

### Claim 15 (depends on 13)

The semiconductor device according to claim 13, further comprising:
a gate electrode;
a source electrode and a drain electrode; and
a gate insulating layer,
wherein the semiconductor device is a field effect transistor where the active layer is formed between the source electrode and the drain electrode, and the gate insulating layer is formed between the gate electrode and the active layer.

### Claim 16 (depends on 13)

A display device comprising:
a light control device configured to control output of light based on a driving signal; and
a driving circuit containing the semiconductor device according to claim 13 and configured to drive the light control device.

### Claim 17 (depends on 16)

The display device according to claim 16, wherein the light control device comprises an organic electroluminescence device or an electrochromic device.

### Claim 18 (depends on 16)

The display device according to claim 16, wherein the light control device comprises a liquid crystal device, an electrophoretic device or an electrowetting device.

### Claim 19 (depends on 16)

An image display apparatus comprising:
a plurality of display devices which are arranged in a matrix form, wherein each display device amongst the plurality of display devices contains a field effect transistor and is configured according to claim 16;
a plurality of wirings configured to individually apply gate voltage and signal voltage to the field effect transistors of the display devices; and
a display control apparatus configured to individually control the gate voltage and the signal voltage in the field effect transistors via the wirings based on image data,
wherein the image display apparatus is configured to display an image based on the image data.

### Claim 20 (depends on 19)

A system comprising:
the image display apparatus according to claim 19; and
an image data generation apparatus configured to generate image data based on image information to be displayed, and output the image data to the image display apparatus.