# US 2019/0172811 A1 · Line-integrated switch and method for producing a line-integrated switch > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0172811 A1 - Document ID: US20190172811A1 - Status: Published application - Kind: A1 - Application number: 16/308,157 - Filed: 2017-03-22 - Published: 2019-06-06 - Earliest claimed: 2016-06-14 - Assignees: Auto-Kabel Management GmbH - Applicants: Auto-Kabel Management GmbH - Inventors: Simon Betscher; Wacim Tazarine - Web page: https://patentgrep.com/patent/US20190172811A1 ## CPC - H10W 72/30: Die-attach connectors - H10W 72/073: {of die-attach connectors} - H10W 72/90: Bond pads, in general - H10W 99/00: Subject matter not provided for in other groups of this subclass - H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} - H10W 72/07336: {Soldering or alloying} - H10W 72/07352: {changes in structures or sizes} - H10W 72/07354: {changes in dispositions} - H10W 72/327: {Multiple die-attach connectors having different sizes} - H10W 72/347: {Dispositions of multiple die-attach connectors} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/381: {Auxiliary members} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/926: {Multiple bond pads having different sizes} - H10W 72/944: {Dispositions of multiple bond pads} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Line-integrated switch having at least a first metal flat part 2, at least a second metal flat part 8, wherein the flat parts are arranged in an overlapping region with the wide sides thereof one above the other and in the overlapping region a semi-conductor switch 18 is arranged between the flat parts 2, 8 so as to connect the flat parts 2, 8 to each other in a switching manner. A simple construction is possible in that at least in the overlapping region a first of the flat parts 2, at a side facing the second of the flat parts 8, is coated at least partially with an insulation, wherein a recess is provided in the insulation in a contact region 10 and the semi-conductor switch 18 in the contact region 10 is electrically contacted with the flat part 8. ## Claims ### Claim at position 1 1-15. (canceled) ### Claim 16 Multi-layer cable with a line-integrated switch having at least a first strand made from a metal flat part, at least a second strand made from a metal flat part, wherein the stands are guided in a common isolation, wherein each strand a respective flat part are arranged in respective overlapping region with the wide sides thereof one above the other and in the overlapping region a semiconductor switch is arranged between the respective strand and the respective flat part so as to connect the strands with the flat part to each other in a switching manner, wherein at least in the overlapping region a respective strand at a side facing the second of the respective flat part is coated at least partially with an insulation, wherein a recess is provided in the insulation in a contact region and the semiconductor switch is electrically contacted with the respective strand in the contact region. ### Claim 17 (depends on 16) Line-integrated switch according to claim 16, wherein the respective semiconductor switch is soldered in the contact region to the respective strand and/or in that the contact region is tin-plated. ### Claim 18 (depends on 16) Line-integrated switch according to claim 16, wherein the first respective flat part is coated with an at least three-layered structure, wherein a conductive layer is guided between two insulation layers. ### Claim 19 (depends on 18) Line-integrated switch according to claim 18, wherein the insulation layer is formed from at least one printed circuit board material and the printed circuit board material is applied directly to the respective flat part. ### Claim 20 (depends on 19) Line-integrated switch according to claim 19, wherein on the printed circuit board material the conductive layer is applied, in particular in that the conductive layer is a copper layer, wherein the conductive layer forms in particular strip conductors. ### Claim 21 (depends on 20) Line-integrated switch according to claim 20, wherein a protective layer, in particular a solder resist is applied to the conductive layer. ### Claim 22 (depends on 20) Line-integrated switch according to claim 20, wherein the conductive layer has a contact pad for a gate contact of the semiconductor switch. ### Claim 23 (depends on 16) Line-integrated switch according to claim 16, wherein at least in the overlapping region the respective flat part is coated at a side facing the respective strand at least partially with a metal coating, in particular with tin, so as form a connection region, wherein the semiconductor switch is electrically contacted with the respective flat part in the connection region, in particular soldered to the connection region. ### Claim 24 (depends on 16) Line-integrated switch according to claim 16, wherein at least in the overlapping region the respective flat part is coated at the side facing the respective strand with an insulator, in particular with an insulation paint. ### Claim 25 (depends on 16) Line-integrated switch according to claim 16, wherein at one of the respective strands or the respective flat parts is formed from an aluminium material or a copper material. ### Claim 26 (depends on 16) Line-integrated switch according to claim 16, wherein on the respective flat part at least one metal coating is roll-bonded on the flat part. ### Claim 27 (depends on 16) Line-integrated switch according to claim 16, wherein the longitudinal axes of the respective strand and the respective flat part are formed in the region of the overlapping region in an angular manner. ### Claim 28 (depends on 23) Line-integrated switch according to claim 23, wherein the semiconductor switch is connected with the source and drain contacts thereof to the contact region and the connection region.