# US 2019/0172785 A1 · Integrated Circuit Comprising an Antifuse Structure and Method of Realizing > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0172785 A1 - Document ID: US20190172785A1 - Status: Published application - Kind: A1 - Application number: 16/270,356 - Filed: 2019-02-07 - Published: 2019-06-06 - Earliest claimed: 2016-11-08 - Assignees: STMicroelectronics (Rousset) SAS - Applicants: STMicroelectronics (Rousset) SAS - Inventors: Pascal Fornara; Christian Rivero - Web page: https://patentgrep.com/patent/US20190172785A1 ## CPC - H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive} - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/42: Vias, e.g. via plugs - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An integrated circuit includes a substrate; an interconnect portion disposed over the substrate, the interconnect portion comprising multiple metallization levels separated by an insulating region; and an antifuse structure coated with a portion of the insulating region, the antifuse structure comprising a beam held at two different points by two arms, a body, and an antifuse insulating zone, the beam, the body and the arms being metal and located within a same metallization level, the body and the beam mutually making contact via the antifuse insulating zone, the antifuse insulating zone configured to undergo breakdown in the presence of a breakdown potential difference between the body and the beam. ## Claims ### Claim 1 A method for manufacturing an integrated circuit comprising an antifuse structure, the method comprising: forming an insulating intermediate region over a substrate; forming, within a metallization level over the insulating intermediate region, a metal intermediate structure comprising a body and a beam held at two different points by two arms; removing part of the insulating intermediate region located below the metal intermediate structure to free the metal intermediate structure and to allow the beam to move and contact the body via an insulating zone to form the antifuse structure, the insulating zone configured to undergo breakdown in the presence of a breakdown potential difference between the body and the beam; and coating the antifuse structure with an insulating material. ### Claim 2 (depends on 1) The method of claim 1, further comprising forming the insulating zone via oxidation of the metal intermediate structure during the freeing of the metal intermediate structure. ### Claim 3 (depends on 1) The method of claim 1, wherein the insulating zone comprises alumina. ### Claim 4 (depends on 1) The method of claim 1, further comprising forming a plurality of antifuse structures. ### Claim 5 (depends on 1) The method of claim 1, wherein coating the antifuse structure comprises depositing an inter-metal dielectric (IMD) layer. ### Claim 6 (depends on 1) The method of claim 1, wherein a thickness of the insulating zone is less than 20 nm. ### Claim 7 (depends on 6) The method of claim 6, wherein a thickness of the insulating zone is at least 2 nm. ### Claim 8 (depends on 1) The method of claim 1, wherein the beam and the two arms have a shape of an asymmetrical cross. ### Claim 9 (depends on 1) The method of claim 1, wherein removing the part of the insulating intermediate region located below the metal intermediate structure comprises performing isotropic dry etching followed by wet etching. ### Claim 10 (depends on 1) The method of claim 1, further comprising forming a protective wall using one or more vias next to the insulating intermediate region prior to removing the part of the insulating intermediate region located below the metal intermediate structure. ### Claim 11 (depends on 1) The method of claim 1, wherein the breakdown potential difference is located at about 5 V. ### Claim 12 (depends on 1) The method of claim 1, further comprising forming a metal shield above the antifuse structure. ### Claim 13 A method for manufacturing an integrated circuit comprising a plurality of antifuse structures, the method comprising: forming an insulating intermediate region over a substrate; forming, within a metallization level over the insulating intermediate region, a plurality of metal intermediate structures, each metal intermediate structure comprising a respective body and a respective beam held at two different points by two respective arms; freeing the plurality of metal intermediate structures by removing part of the insulating intermediate region to allow each respective beam to come into contact with each respective body via respective insulating zones, the insulating zones resulting from oxidation of the plurality of metal intermediate structures during the freeing, the insulating zones configured to undergo breakdown in the presence of a breakdown potential difference between the respective body and the respective beam; and coating the plurality of antifuse structures with an insulating material. ### Claim 14 A method for manufacturing an antifuse structure, the method comprising: forming a first metallization layer over a substrate; forming a first insulating intermediate region over the first metallization layer; forming a second metallization layer over the first insulating intermediate region, the second metallization layer comprising a metal intermediate structure that comprises a body and a beam held at two different points by two arms; removing at least a portion of the first insulating intermediate region so that the body and the beam make contact via an antifuse insulating zone to form the antifuse structure, the antifuse insulating zone configured to undergo breakdown in the presence of a breakdown potential difference between the body and the beam; and forming a second insulating intermediate region over the antifuse structure. ### Claim 15 (depends on 14) The method of claim 14, wherein the first metallization layer corresponds to a second metal layer of an integrated circuit, and wherein the second metallization layer corresponds to a third metal layer of the integrated circuit. ### Claim 16 (depends on 14) The method of claim 14, further comprising forming a plurality of vias above the first metallization layer, wherein the body is connected to the first metallization layer through a via of the plurality of vias. ### Claim 17 (depends on 14) The method of claim 14, wherein after the freeing, the two arms extend substantially in parallel to a first direction, and the beam has a non-zero angular deviation with respect to a second direction that is orthogonal to the first direction. ### Claim 18 (depends on 14) The method of claim 14, wherein the beam is covered by a first metal oxide, wherein the body is covered by a second metal oxide, the first and second metal oxide each having a thickness between 7 nm and 8 nm. ### Claim 19 (depends on 14) The method of claim 14, wherein the beam comprises copper. ### Claim 20 (depends on 14) The method of claim 14, wherein the beam comprises aluminum. ### Claim 21 (depends on 14) The method of claim 14, wherein a thickness of the antifuse insulating zone is at least 2 nm.