# US 2019/0172744 A1 · Tcb bond tip design to mitigate top die warpage and solder stretching issue

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- Number: US 2019/0172744 A1
- Document ID: US20190172744A1
- Status: Published application
- Kind: A1
- Application number: 15/830,648
- Filed: 2017-12-04
- Published: 2019-06-06
- Earliest claimed: 2017-12-04
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Yet Hong Tan
- Web page: https://patentgrep.com/patent/US20190172744A1

## CPC

- H10P 72/78: using vacuum or suction, e.g. Bernoulli chucks
- H10W 90/00: Package configurations
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07178: {Means for aligning}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07254: {changes in dispositions}
- H10W 72/247: {Dispositions of multiple bumps}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor tool and methods of forming semiconductor device assemblies. The semiconductor tool is a bond tip having a vacuum port and a plurality of purge ports with channels coupling the vacuum port with the purge ports. Air may be withdrawn through the vacuum to create a vacuum on the bottom of the bond tip to selectively couple a semiconductor device with the bond tip. The bond tip positions the semiconductor device on top of a stack of semiconductor devices to form a semiconductor device assembly. The assembly may be heated to reflow interconnects between the semiconductor device and the top device of the stack of semiconductor devices. Fluid provided through the purge ports may help to counter warpage of the semiconductor device to help form adequate interconnects between the devices. Fluid may also be provided through the vacuum port to counter the warpage.

## Claims

### Claim 1

A semiconductor tool comprising:
a bond tip having a vacuum port and a first purge port, a first channel coupling the vacuum port with the first purge port;
a first flow unit coupled to the vacuum port, the first flow unit being configured to withdraw air through the vacuum port in a first mode of operation and provide a fluid through the vacuum port in a second mode of operation; and
a second flow unit coupled to the first purge port, the second flow unit being configured to provide a fluid through the first purge port.

### Claim 2 (depends on 1)

The tool of claim 1, wherein the second flow unit is configured to provide fluid through the first purge port prior to the first flow unit operating in the second mode of operation.

### Claim 3 (depends on 1)

The tool of claim 1, the bond tip further comprising:
a second purge port;
a second channel coupling the vacuum port with the second purge port;
a third purge port;
a third channel coupling the vacuum port with the third purge port;
a fourth purge port; and
a fourth channel coupling the vacuum port with the fourth purge port.

### Claim 4 (depends on 3)

The tool of claim 3, wherein second flow unit is configured to provide a fluid through the second purge port, to provide a fluid through the third purge port, and to provide a fluid through the fourth purge port.

### Claim 5 (depends on 3)

The tool of claim 3, further comprising:
a third flow unit coupled to the second purge port, the third flow unit being configured to provide a fluid through the second purge port;
a fourth flow unit coupled to the third purge port, the fourth flow unit being configured to provide a fluid through the third purge port;
a fifth flow unit coupled to the fourth purge port, the fifth flow unit being configured to provide a fluid through the fourth purge port.

### Claim 6 (depends on 3)

The tool of claim 3, wherein the vacuum port is located substantially in a center of the bond tip and wherein the first, second, third, and fourth purge ports are each substantially located adjacent to corners of the bond tip.

### Claim 7 (depends on 3)

The tool of claim 3, the bond tip further comprising:
a fifth channel coupling the first purge port with the second purge port;
a sixth channel coupling the second purge port with the third purge port;
a seventh channel coupling the third purge port with the fourth purge port; and
an eighth channel coupling the fourth purge port with the first purge port.

### Claim 8 (depends on 7)

The tool of claim 7, wherein the first flow unit in the first mode of operation provides a vacuum within the first channel, second channel, third channel, fourth channel, fifth channel, sixth channel, seventh channel, and the eight channel.

### Claim 9 (depends on 1)

The tool of claim 1, wherein the first flow unit in the first mode of operation is configured to selectively secure a semiconductor device to the bond tip.

### Claim 10 (depends on 1)

The tool of claim 1, wherein the first flow unit is configured to have a delay when switching from the first mode of operation to the second mode of operation.

### Claim 11 (depends on 10)

The tool of claim 10, wherein the delay is between 0 and 0.3 seconds.

### Claim 12

A system comprising:
a bond tip having a central vacuum port, a plurality of purge ports, and a plurality of channels fluid coupling the vacuum port with the plurality of purge ports, wherein the plurality of the purge ports are located along the periphery of the bond tip; and
a first flow unit;
a second flow unit;
a substrate;
at least one semiconductor device on the substrate; and
a final semiconductor device selectively attached to the bond tip by withdrawing air through the central vacuum port via the first flow unit, wherein the final semiconductor device is configured to be attached on top of the at least one semiconductor device on the substrate.

### Claim 13 (depends on 12)

The system of claim 12, wherein each of the semiconductor devices is a die.

### Claim 14 (depends on 12)

The system of claim 12, wherein each of the flow units is configured to flow fluid through a port in the bond tip against the final semiconductor device while the final semiconductor device is attached to the semiconductor device on the substrate.

### Claim 15 (depends on 12)

The system of claim 12, wherein the at least one semiconductor device further comprises at least two semiconductor devices stacked on the substrate, wherein the final semiconductor device is configured to be attached on top of the at least two semiconductors stacked on the substrate.

### Claim 16

A method of forming a semiconductor device assembly comprising:
withdrawing air through a vacuum port in a bond tip to selectively attach a first surface of a first semiconductor device to a bottom surface of the bond tip;
positioning the first semiconductor device adjacent to a second semiconductor device;
heating the first and second semiconductor devices to a predetermined temperature to reflow a plurality of interconnects between a second surface of the first semiconductor device and the second semiconductor device;
flowing a fluid through a plurality of purge ports in the bond tip, the fluid flowing against the first surface of the first semiconductor device;
stopping the withdrawal of air through the vacuum port upon heating the first and second semiconductor devices to the predetermined temperature; and
flowing a fluid through the vacuum port in the bond tip after flowing fluid through the plurality of purge ports, the fluid through the vacuum port flowing against the first surface of the first semiconductor device.

### Claim 17 (depends on 16)

The method of claim 16, wherein the predetermined temperature is approximately 225 degrees Celsius or above.

### Claim 18 (depends on 16)

The method of claim 16, wherein flowing the fluid through the purge ports occurs prior to stopping the withdrawal of air through the vacuum port.

### Claim 19 (depends on 18)

The method of claim 18, wherein flowing the fluid through the purge ports occurs between 0 to 0.3 seconds before stopping the withdrawal of air through the vacuum port.

### Claim 20 (depends on 16)

The method of claim 16, wherein withdrawing air through the vacuum port further comprises withdrawing air at a flow rate of approximately 1.25 liters per second to 1.583 liters per second.