# US 2019/0172707 A1 · Method for manufacturing a semiconductor device and film deposition apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0172707 A1 - Document ID: US20190172707A1 - Status: Published application - Kind: A1 - Application number: 16/196,111 - Filed: 2018-11-20 - Published: 2019-06-06 - Earliest claimed: 2017-12-01 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Takahito UMEHARA; Masato KOAKUTSU - Web page: https://patentgrep.com/patent/US20190172707A1 ## CPC - C23C 16/0209: {by heating} - H10P 14/6502: {of treatments performed before formation of the materials} - C23C 16/0281: {of metallic sub-layers (C23C16/029 takes precedence)} - C23C 16/06: characterised by the deposition of metallic material - C23C 16/14: Deposition of only one other metal element - C23C 16/401: {containing silicon} - C23C 16/402: {Silicon dioxide} - C23C 16/45519: {Inert gas curtains} - C23C 16/45544: {characterized by the apparatus} - C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23C 16/56: After-treatment - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/35: with cell select transistors, e.g. NAND - H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)} - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/6681: {the precursor containing a compound comprising Si} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/6687: {the compound comprising silicon and nitrogen} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P 32/14: within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase - H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel} - H10P 72/7621: {characterised by supporting two or more semiconductor substrates} - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising steps of: removing impurities contained in a first layer formed on a substrate by heating the first layer; and forming on the first layer a second layer containing a component that forms a substance that is able to vaporize by reacting with the impurities. ### Claim 2 (depends on 1) The method as claimed in claim 1, wherein the step of removing the impurities comprises sublimating the impurities from the first layer by accelerating diffusion of the impurities contained in the first layer. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein the first layer is formed at a first temperature; and wherein the step of removing the impurities comprises heating the first layer at a second temperature that is higher than the first temperature. ### Claim 4 (depends on 3) The method as claimed in claim 3, wherein the step of heating the first layer at the second temperature comprises heating the first layer at 620° C. or higher. ### Claim 5 (depends on 3) The method as claimed in claim 3, wherein the step of heating the first layer at the second temperature comprises heating the first layer at 700° C. or higher. ### Claim 6 (depends on 1) The method as claimed in claim 1, wherein the impurities contain fluorine; wherein the component that forms the substance that is able to vaporize by reacting with the impurities contain silicon; and wherein the substance that is able to vaporize is silicon fluoride. ### Claim 7 (depends on 1) The method as claimed in claim 1, wherein the first layer contains tungsten. ### Claim 8 (depends on 1) The method as claimed in claim 1, wherein the step of removing impurities comprises heating the first layer in an atmosphere where thermal oxidation of the first layer is reduced. ### Claim 9 (depends on 8) The method as claimed in claim 8, wherein the step of heating the first layer in the atmosphere where thermal oxidation of the first layer is reduced comprises heating the first layer in a reducing atmosphere, an atmosphere where a concentration of oxygen is lower than an atmosphere where the first layer is formed, or a reducing atmosphere where the concentration of oxygen is lower than the atmosphere where the first layer is formed. ### Claim 10 (depends on 1) The method as claimed in claim 1, wherein the steps of removing the impurities and forming the second layer are performed in a same processing apparatus without exposing the substrate to air. ### Claim 11 (depends on 1) The method as claimed in claim 1, wherein the first layer contains a component that is able to form an oxide film, and further comprising: removing an oxidation component contained in the first layer by supplying a reducing gas to the substrate in a reducing atmosphere between the steps of removing the impurities and forming the second layer. ### Claim 12 (depends on 11) The method as claimed in claim 11, further comprising: depositing an atomic layer of a source gas of the second layer on the first layer by supplying the source gas of the second layer to the first layer in the reducing atmosphere. ### Claim 13 (depends on 12) The method as claimed in claim 12, further comprising: depositing an oxide film on the first layer by oxidizing the source gas by supplying the atomic layer of the source gas formed on the first layer by suppling an oxidation gas after the step of depositing the atomic layer of the source gas on the first layer. ### Claim 14 (depends on 13) The method as claimed in claim 13, wherein the first layer contains tungsten; and wherein the source gas is a silicon-containing gas. ### Claim 15 (depends on 13) The method as claimed in claim 13, wherein the reducing gas is hydrogen gas; and wherein the oxidation gas is oxygen gas. ### Claim 16 (depends on 13) The method as claimed in claim 13, wherein after performing the steps of depositing the atomic layer of the source gas on the first layer and depositing the oxide film on the first layer one time, the steps of supplying the source gas to the substrate and supplying the oxidation gas to the substrate are periodically repeated. ### Claim 17 (depends on 15) The method as claimed in claim 15, wherein the substrate is placed along a circumferential direction of a susceptor rotatable and provided in a process chamber; wherein a source gas supply region is configured to supply the source gas to the substrate and provided above the susceptor and along the circumferential direction of the susceptor; a reducing/oxidizing region is configured to supply hydrogen gas and/or oxygen gas to the substrate and provided above the turntable and apart from the source gas supply region in the circumferential direction of the susceptor; wherein the step of removing the oxidation component contained in the first layer is performed by supplying hydrogen gas without supplying oxygen gas at the reducing/oxidizing region while rotating the susceptor so as to pass the reducing/oxidizing region at least one time; wherein the step of depositing the atomic layer of the source gas on the first layer is performed by causing the substrate to pass the source gas supply region while supplying the source gas at the source gas supply region after causing the substrate to pass the reducing/oxidizing region at least one time; and wherein the step of depositing the oxide film on the first layer by oxidizing the source gas is performed by causing the substrate to pass the reducing/oxidizing region while supplying hydrogen gas and oxygen gas at the reducing/oxidizing region after causing the substrate to pass the source gas supply region at least one time. ### Claim 18 (depends on 17) The method as claimed in claim 17, wherein after the step of depositing the oxide film on the first layer by oxidizing the source gas, the steps of supplying the source gas to the substrate and supplying hydrogen gas and the oxidation gas to the substrate are periodically repeated by rotating the susceptor multiple times while supplying the source gas at the source gas supply region and while supplying hydrogen gas and oxygen gas at the reducing/oxidizing region. ### Claim 19 A film deposition apparatus, comprising: a process chamber; a rotatable susceptor provided in the process chamber and configured to receive a substrate along a circumferential direction thereof; a source gas supply region configured to supply a source gas to the substrate and provided above the turntable and along a rotational direction of the turntable; a reducing/oxidizing region configured to supply hydrogen gas and/or oxygen gas to the substrate and provided above the substrate and downstream of and apart from the source gas supply region in the rotational direction of the susceptor; a heater configured to heat the susceptor; and a controller configured to cause the heater to heat the susceptor after a substrate having a first layer that contains impurities is placed on the susceptor such that the impurities contained in the first layer are removed. ### Claim 20 (depends on 19) The film deposition apparatus as claimed in claim 19, wherein the controller is configured to perform the following steps after the heater heats the susceptor such that the impurities contained in the first layer are removed; reducing the first layer by rotating the susceptor while supplying hydrogen gas without supplying oxygen gas at the reducing/oxidizing region; depositing an atomic layer of the source gas on the reduced first layer by starting supplying the source gas at the source gas supply region while rotating the susceptor and supplying hydrogen gas at the reducing/oxidizing region after the step of reducing the first layer; and depositing an oxide film by oxidizing the atomic layer of the source gas on the first layer by starting supplying oxygen gas at the reducing/oxidizing region while rotating the susceptor, supplying hydrogen gas at the reducing/oxidizing region and supplying the source gas at the source gas supply region after the step of depositing the atomic layer of the source gas on the first layer.