# US 2019/0172704 A1 · ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES

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- Number: US 2019/0172704 A1
- Document ID: US20190172704A1
- Status: Published application
- Kind: A1
- Application number: 16/250,188
- Filed: 2019-01-17
- Published: 2019-06-06
- Earliest claimed: 2016-03-11
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Thomas J. Haigh, JR.; Son V. Nguyen; Deepika Priyadarshini; Hosadurga Shobha
- Web page: https://patentgrep.com/patent/US20190172704A1

## CPC

- H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
- C23C 16/36: Carbonitrides
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6502: {of treatments performed before formation of the materials}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/6689: {the compound being a silazane}
- H10P 14/6903: {containing silicon}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 74/43: comprising oxides, nitrides or carbides, e.g. ceramics or glasses
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for depositing a dielectric layer that includes introducing a substrate into a process chamber of a deposition tool; and heating the substrate to a process temperature. The method may further include introducing precursors that include at least one dielectric providing gas species for a deposited layer and at least one hydrogen precursor gas into the process chamber of the deposition tool. The hydrogen precursor gas is introduced to the deposition chamber at a flow rate ranging from 50 sccm to 5000 sccm. The molar ratio for Hydrogen/Silicon gas precursor can be equal or greater than 0.05.

## Claims

### Claim 1

A method for depositing a silicon and hydrogen containing layer comprising:
introducing a substrate into a process chamber of a deposition tool;
heating the substrate to a process temperature;
introducing precursors that include at least one dielectric providing gas species for a deposited layer comprising silicon and at least one hydrogen precursor gas into the process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate to provide a molar ration of hydrogen to silicon that is greater than 0.05; and
activating a plasma in the process chamber.

### Claim 2 (depends on 1)

The method of claim 1, wherein the flow rate of the hydrogen precursor gas ranges from 50 to 5000 sccm.

### Claim 3 (depends on 1)

The method of claim 1, wherein the deposited dielectric is SiCNH.

### Claim 4 (depends on 1)

The method of claim 1, wherein the at least one dielectric providing gas species for the deposited layer comprises a silicon containing precursor.

### Claim 5 (depends on 1)

The method of claim 1, wherein the at least one dielectric providing gas species for the deposited layer comprises a carbon containing precursor.

### Claim 6 (depends on 1)

The method of claim 1, wherein the at least one dielectric providing gas species for the deposited layer comprises a nitrogen containing precursor.

### Claim 7 (depends on 1)

The method of claim 1, wherein the SiCNH has a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C.

### Claim 8

A method for depositing a dielectric film comprising:
introducing a substrate into a chamber of a deposition tool;
heating the substrate to a process temperature;
introducing precursors that include at least one dielectric providing gas species for the deposited layer;
introducing a hydrogen precursor gas at a flow rate greater than 50 sccm; and
activating a plasma in the process chamber to deposit a dielectric material comprised of at least one of silicon, carbon, nitrogen and hydrogen, wherein a greater flow of hydrogen precursor reduces hydrogen incorporation in the dielectric material being deposited so that they hydrogen content is less than 30 wt. %.

### Claim 9 (depends on 8)

The method of claim 8, wherein the at least one dielectric providing gas species for the deposited layer comprises at least one of a silicon containing precursor, a carbon containing precursor and a nitrogen containing precursor.

### Claim 10 (depends on 9)

The method of claim 9, wherein the silicon containing precursor comprises hexachlorodisilane (Si2Cl6), tetrachlorosilane (SiCl4), dichlorosilane (Cl2SiH2), trichlorosilane (Cl3SiH), methylsilane ((CH3)SiH3), dimethylsilane ((CH3)2SiH2), trimethyl silane ((CH3)3SiH), tetramethyl silane ((CH3)4Si), ethylsilane ((CH3CH2)SiH3), methyldisilane ((CH3)Si2H5), dimethyldisilane ((CH3)2Si2H4), hexamethyldisilane ((CH3)6Si2) or combinations thereof.

### Claim 11 (depends on 9)

The method of claim 9, wherein the nitrogen containing precursor comprises ammonia (NH3), hydrazine (N2H4), methyl hydrazine ((CH3)HN2H2), dimethyl hydrazine ((CH3)2N2H2), t-butylhydrazine (C4H9N2H3), phenylhydrazine (C6H5N2H3), N2, N2/H2, NH3, N2H4 plasmas, 2,2′-azotertbutane ((CH3)6C2N2), methylazide (CH3N3), ethylazide (C2H5N3), trimethylsilylazide (Me3SiN3), or combinations thereof.

### Claim 12 (depends on 10)

The method of claim 10, wherein the hydrogen precursor gas is H2 gas

### Claim 13 (depends on 12)

The method of claim 12, wherein the flow rate of the hydrogen precursor ranges from 50 sccm to 5000 sccm.

### Claim 14 (depends on 8)

The method of claim 8, wherein the SiCNH has a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C.

### Claim 15

A method for depositing a silicon and hydrogen containing layer comprising:
introducing precursors that include at least one dielectric providing gas species for a deposited layer formed on a substrate comprising silicon and at least one hydrogen precursor gas into a process chamber of the deposition tool, wherein the hydrogen precursor gas is introduced to the process chamber at a flow rate to provide a molar ration of hydrogen to silicon that is greater than 0.05; and
activating a plasma in the process chamber, the deposited layer having a shrinkage that is less than 4.5% after being treated with an ultraviolet curing process for a temperature ranging from 350° C. to 400° C.

### Claim 16 (depends on 15)

The method of claim 15, wherein the at least one dielectric providing gas species for the deposited layer comprises a silicon containing precursor.

### Claim 17 (depends on 15)

The method of claim 15, wherein the at least one dielectric providing gas species for the deposited layer comprises a carbon containing precursor.

### Claim 18 (depends on 15)

The method of claim 15, wherein the at least one dielectric providing gas species for the deposited layer comprises a nitrogen containing precursor.

### Claim 19 (depends on 16)

The method of claim 16, wherein the silicon containing precursor comprises hexachlorodisilane (Si2Cl6), tetrachlorosilane (SiCl4), dichlorosilane (Cl2SiH2), trichlorosilane (Cl3SiH), methylsilane ((CH3)SiH3), dimethylsilane ((CH3)2SiH2), trimethyl silane ((CH3)3SiH), tetramethyl silane ((CH3)4Si), ethylsilane ((CH3CH2)SiH3), methyldisilane ((CH3)Si2H5), dimethyldisilane ((CH3)2Si2H4), hexamethyldisilane ((CH3)6Si2) or combinations thereof.

### Claim 20 (depends on 18)

The method of claim 18, wherein the nitrogen containing precursor comprises ammonia (NH3), hydrazine (N2H4), methyl hydrazine ((CH3)HN2H2), dimethyl hydrazine ((CH3)2N2H2), t-butylhydrazine (C4H9N2H3), phenylhydrazine (C6H5N2H3), N2, N2/H2, NH3, N2H4 plasmas, 2,2′-azotertbutane ((CH3)6C2N2), methylazide (CH3N3), ethylazide (C2H5N3), trimethylsilylazide (Me3SiN3), or combinations thereof.