# US 2019/0172701 A1 · UNIFORM DEPOSITION OF SiOC ON DIELECTRIC AND METAL SURFACES > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0172701 A1 - Document ID: US20190172701A1 - Status: Published application - Kind: A1 - Application number: 16/208,350 - Filed: 2018-12-03 - Published: 2019-06-06 - Earliest claimed: 2017-12-04 - Assignees: ASM IP Holding B.V. - Applicants: ASM IP Holding BV - Inventors: Lingyun Jia; Viljami Pore; Eva Tois; Sun Ja Kim - Web page: https://patentgrep.com/patent/US20190172701A1 ## CPC - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - C23C 16/32: Carbides - C23C 16/401: {containing silicon} - C23C 16/45536: {Use of plasma, radiation or electromagnetic fields} - C23C 16/45542: {Plasma being used non-continuously during the ALD reactions} - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane} - H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Plasma enhanced atomic layer deposition (PEALD) processes for simultaneously depositing SiOC on two or more different surfaces of a substrate are provided. For example, SiOC may be deposited simultaneously on a first dielectric surface and a second metal or metallic surface. The PEALD processes can comprise two or more deposition cycles for forming SiOC on the two surfaces. The deposition cycles may comprise alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant, such as an Ar/H2 plasma. In some embodiments, a PEALD process further comprises contacting the substrate with a plasma reactant prior to beginning the deposition cycle. In some embodiments, the deposition cycle is repeated more than 500 times and a uniform SiOC film may be formed on the two different surfaces. ## Claims ### Claim 1 A plasma enhanced atomic layer deposition (PEALD) process for depositing SiOC on two or more different surfaces of a substrate comprising: providing a substrate comprising a first surface and a second surface, wherein the first surface comprises a different material from the second surface; conducting two or more deposition cycles comprising alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant. ### Claim 2 (depends on 1) The method of claim 1, wherein the first surface is a metal surface and the second surface is a dielectric surface. ### Claim 3 (depends on 2) The method of claim 2, wherein the dielectric surface comprises SiO2. ### Claim 4 (depends on 2) The method of claim 2, wherein the metal surface comprises W. ### Claim 5 (depends on 1) The method of claim 1, wherein the plasma reactant comprises Ar/H2 plasma. ### Claim 6 (depends on 1) The method of claim 1, wherein the plasma reactant does not comprise oxygen species. ### Claim 7 (depends on 1) The method of claim 1, wherein the first precursor is a silicon precursor. ### Claim 8 (depends on 1) The method of claim 1, wherein the silicon precursor has the formula Si(ORI)4-xRIIx, wherein x=0 to 3, RI is alkyl with 1-5 carbons and RII is any ligand containing carbon and/or hydrogen and/or oxygen and all RI and RII groups can be selected independently. ### Claim 9 (depends on 8) The method of claim 8, wherein RII has alkenyl, alkynyl, phenyl, carbonyl, aldehyde, ester, ether, carboxyl, peroxy or hydroperoxy functionalities, and wherein all RI and RII groups can be chosen independently from each other. ### Claim 10 (depends on 8) The method of claim 8, wherein the first precursor is MPTMS. ### Claim 11 (depends on 1) The method of claim 1, wherein first precursor is MPTMS and the second reactant comprises Ar/H2 plasma. ### Claim 12 (depends on 1) The method of claim 1, additionally comprising contacting the substrate with a plasma reactant prior to beginning the deposition cycle. ### Claim 13 (depends on 1) The method of claim 1, wherein the SiOC film is deposited uniformly on the first surface and second surface. ### Claim 14 (depends on 1) The method of claim 1, wherein the deposition cycle is repeated more than 500 times. ### Claim 15 (depends on 1) The method of claim 1, wherein the SiOC film has a k value of less than 4. ### Claim 16 A method of depositing a SiOC thin film on both a first dielectric surface of a substrate and a second metal surface of the same substrate comprising two or more deposition cycles comprising alternately and sequentially contacting the substrate with a first reactant comprising silicon and a second plasma reactant that does not comprise oxygen species. ### Claim 17 (depends on 16) The method of claim 16, wherein the first reactant is MPTMS and the second reactant is plasma generated in Ar/H2 gas. ### Claim 18 (depends on 16) The method of claim 16, wherein the dielectric surface comprises SiO2 and the metal surface comprises W. ### Claim 19 A plasma enhanced atomic layer deposition (PEALD) process for depositing SiOC on a first surface of a substrate comprising SiO2 and a second surface of the substrate comprising W, the process comprising two or deposition cycles comprising in sequence: contacting the substrate with a first reactant comprising MPTMS; contacting the substrate with a purge gas; contacting the substrate with Ar/H2 plasma; and contacting the substrate with a purge gas. ### Claim 20 (depends on 19) The method of claim 19, additionally comprising contacting the substrate with a plasma reactant prior to the first deposition cycle. ### Claim 21 (depends on 19) The method of claim 19, wherein the SiOC is deposited uniformly on the first and second surfaces.