# US 2019/0172687 A1 · Ring-shaped electrode

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- Number: US 2019/0172687 A1
- Document ID: US20190172687A1
- Status: Published application
- Kind: A1
- Application number: 16/322,954
- Filed: 2017-07-28
- Published: 2019-06-06
- Earliest claimed: 2016-08-04
- Assignees: Thinkon New Technology Japan Corporation
- Applicants: Thinkon New Technology Japan Corporation
- Inventors: Atsushi Ikari; Satoshi Fujii
- Web page: https://patentgrep.com/patent/US20190172687A1

## CPC

- H01J 37/32559: {Protection means, e.g. coatings}
- H01J 37/32541: {Shape}
- H01J 37/3255: {Material}
- H01J 37/32605: {Removable or replaceable electrodes or electrode systems}
- H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence)
- H10P 50/242: {of Group IV materials}
- H10P 72/0421: {for drying etching}
- H10P 72/0436: {mainly by radiation}
- H10P 72/7611: {characterised by edge profile or support profile}
- H01J 2237/334: Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A ring-shaped electrode includes a silicon ring body, and a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, and contains boron oxide.

## Claims

### Claim 1

A ring-shaped electrode, comprising:
a silicon ring body; and
a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon, wherein the joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, and contains boron oxide.

### Claim 2

A ring-shaped electrode, comprising:
a silicon ring body; and
a cover body joined to at least a part of a surface of the ring body via a joining part, and having a better plasma resistance than silicon, wherein the joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, contains any of In, Sn, and Al, and is a eutectic alloy with silicon.

### Claim 3 (depends on 1)

The ring-shaped electrode according to claim 1, wherein the joining part contains any of In, Sn, and Al, and contains a eutectic alloy with silicon.

### Claim 4 (depends on 1)

The ring-shaped electrode according to claim 1, wherein:
the ring body has, on one side surface, a concave part on which a wafer is placed; and
the cover body is at least disposed on the one side surface except for the concave part.

### Claim 5 (depends on 2)

The ring-shaped electrode according to claim 2, wherein:
the ring body has, on one side surface, a concave part on which a wafer is placed; and
the cover body is at least disposed on the one side surface except for the concave part.