# US 2019/0172682 A1 · Electrode plate

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- Number: US 2019/0172682 A1
- Document ID: US20190172682A1
- Status: Published application
- Kind: A1
- Application number: 16/322,953
- Filed: 2017-07-28
- Published: 2019-06-06
- Earliest claimed: 2016-08-04
- Assignees: Thinkon New Technology Japan Corporation
- Applicants: Thinkon New Technology Japan Corporation
- Inventors: Atsushi Ikari; Satoshi Fujii
- Web page: https://patentgrep.com/patent/US20190172682A1

## CPC

- H01J 37/3255: {Material}
- H01J 37/32541: {Shape}
- H10P 72/0421: {for drying etching}
- H01J 2237/0213: Avoiding deleterious effects due to interactions between particles and tube elements
- H01J 2237/334: Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An electrode plate includes: a plurality of plate-like electrode members; and a joining part joining the electrode members to each other in a thickness direction. The joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below.

## Claims

### Claim 1

An electrode plate, comprising:
a plurality of plate-like electrode members; and
a joining part joining the electrode members to each other in a thickness direction, wherein the joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, and contains boron oxide.

### Claim 2

An electrode plate, comprising:
a plurality of plate-like electrode members; and
a joining part joining the electrode members to each other in a thickness direction, wherein the joining part has a heat resistance to withstand a temperature of at least 150° C., melts at 700° C. or below, contains any of In, Sn, and Al, and is a eutectic alloy with silicon.

### Claim 3 (depends on 1)

The electrode plate according to claim 1, wherein the joining part contains any of In, Sn, and Al, and contains a eutectic alloy with silicon.

### Claim 4 (depends on 1)

The electrode plate according to claim 1, further comprising a plurality of through holes each penetrating in the thickness direction.

### Claim 5 (depends on 1)

The electrode plate according to claim 1, wherein one of the electrode members disposed on one surface contains a material having a better plasma resistance than silicon.

### Claim 6 (depends on 2)

The electrode plate according to claim 2, further comprising a plurality of through holes each penetrating in the thickness direction.

### Claim 7 (depends on 2)

The electrode plate according to claim 2, wherein one of the electrode members disposed on one surface contains a material having a better plasma resistance than silicon.