# US 2019/0172513 A1 · Magnetoresistive element and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0172513 A1 - Document ID: US20190172513A1 - Status: Published application - Kind: A1 - Application number: 16/323,620 - Filed: 2017-07-19 - Published: 2019-06-06 - Earliest claimed: 2016-08-26 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: EIJI KARIYADA - Web page: https://patentgrep.com/patent/US20190172513A1 ## CPC - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - G11B 5/39: using magneto-resistive devices {or effects} - G11B 5/3909: {Arrangements using a magnetic tunnel junction} - H01F 10/16: containing cobalt ({H01F10/126} , H01F10/13 take precedence) - H01F 10/32: Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} - H01F 10/3272: {by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets} - H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy} - H10B 61/22: {of the field-effect transistor [FET] type} - H10N 50/10: Magnetoresistive devices - H10N 50/80: Constructional details - H10N 50/85: Materials of the active region - H01F 10/132: {containing cobalt} - H01F 10/30: characterised by the composition of the intermediate layers {, e.g. seed, buffer, template, diffusion preventing, cap layers (H01F10/06 and H01F10/32 take precedence)} - G11C: STATIC STORES (semiconductor memory devices H10B) - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A magnetoresistive element 10 is formed by laminating a lower electrode 31, a first ground layer 21A including a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetization fixed layer 24, and an upper electrode 32. The storage layer 22 includes a magnetic material including at least a 3d transition metal element and a boron element in a composition. A second ground layer 21B is further included between the lower electrode 31 and the first ground layer 21A. The second ground layer 21B includes a material including at least one kind of element among elements constituting the storage layer in a composition. ## Claims ### Claim 1 A magnetoresistive element formed by laminating a lower electrode, a first ground layer including a non-magnetic material, a storage layer having perpendicular magnetic anisotropy, an intermediate layer, a magnetization fixed layer, and an upper electrode, wherein the storage layer includes a magnetic material including at least a 3d transition metal element and a boron element in a composition, a second ground layer is further included between the lower electrode and the first ground layer, and the second ground layer includes a material including at least one kind of element among elements constituting the storage layer in a composition. ### Claim 2 (depends on 1) The magnetoresistive element according to claim 1, wherein the second ground layer has in-plane magnetic anisotropy or non-magnetism. ### Claim 3 (depends on 1) The magnetoresistive element according to claim 1, wherein the storage layer includes Co—Fe—B, and a boron atom content of the second ground layer is in a range of 10 atomic % to 50 atomic %. ### Claim 4 (depends on 1) The magnetoresistive element according to claim 1, wherein the second ground layer includes one Co—Fe—B layer, and the first ground layer includes one kind of material selected from a group consisting of tantalum, molybdenum, tungsten, titanium, magnesium, and magnesium oxide. ### Claim 5 (depends on 4) The magnetoresistive element according to claim 4, wherein, when a thickness of the second ground layer is denoted by T2 and a thickness of the storage layer is denoted by T0, T0≤T2 is satisfied. ### Claim 6 (depends on 5) The magnetoresistive element according to claim 5, wherein T2≤3 nm is satisfied. ### Claim 7 (depends on 4) The magnetoresistive element according to claim 4, wherein a third ground layer is formed between the lower electrode and the second ground layer. ### Claim 8 (depends on 7) The magnetoresistive element according to claim 7, wherein the third ground layer includes one kind of material selected from a group consisting of tantalum, molybdenum, tungsten, titanium, magnesium, and magnesium oxide. ### Claim 9 (depends on 7) The magnetoresistive element according to claim 7, wherein the third ground layer includes a same material as a material included in the first ground layer. ### Claim 10 (depends on 1) The magnetoresistive element according to claim 1, wherein the second ground layer is formed by alternately laminating a first material layer and a second material layer. ### Claim 11 (depends on 10) The magnetoresistive element according to claim 10, wherein the first material layer includes a Co—Fe—B layer, and the second material layer includes a non-magnetic material layer. ### Claim 12 (depends on 10) The magnetoresistive element according to claim 10, wherein the second material layer includes one kind of material selected from a group consisting of tantalum, molybdenum, tungsten, titanium, magnesium, and magnesium oxide. ### Claim 13 (depends on 10) The magnetoresistive element according to claim 10, wherein a material included in the first ground layer and a material included in the second material layer are same materials. ### Claim 14 (depends on 10) The magnetoresistive element according to claim 10, wherein, when a thickness of the second ground layer is denoted by T2′, 3 nm≤T2′ is satisfied. ### Claim 15 (depends on 1) The magnetoresistive element according to claim 1, wherein, when a thickness of the first ground layer is denoted by T1, 1 nm≤T1≤4 nm is satisfied. ### Claim 16 A magnetoresistive element formed by laminating a lower electrode, a first ground layer including a non-magnetic material, a storage layer, an intermediate layer, a magnetization fixed layer, and an upper electrode, wherein the storage layer has perpendicular magnetic anisotropy, a second ground layer is further included between the lower electrode and the first ground layer, and the second ground layer has in-plane magnetic anisotropy or non-magnetism. ### Claim 17 (depends on 1) An electronic device comprising: the magnetoresistive element according to claim 1.