# US 2019/0170886 A1 · Apparatus and method for pet detector

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2019/0170886 A1
- Document ID: US20190170886A1
- Status: Published application
- Kind: A1
- Application number: 16/256,178
- Filed: 2019-01-24
- Published: 2019-06-06
- Earliest claimed: 2015-08-10
- Assignees: Shanghai United Imaging Healthcare Co., Ltd.
- Applicants: Shanghai United Imaging Healthcare Co., Ltd.
- Inventors: Shaohui AN; Qiang ZHANG
- Web page: https://patentgrep.com/patent/US20190170886A1

## CPC

- G01T 1/2985: {In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis); (using external radiation sources A61B6/02)}
- G01T 1/1644: {using an array of optically separate scintillation elements permitting direct location of scintillations (G01T1/1645 takes precedence)}
- G01T 1/20185: {Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres}
- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A PET detector and method thereof are provided. The PET detector may include: a crystal array including a plurality of crystal elements arranged in an array and light-splitting structures set on surfaces of the plurality of crystal elements, the light-splitting structures jointly define a light output surface of the crystal array; a semiconductor sensor array, which is set in opposite to the light output surface of the crystal array and is suitable to receive photons from the light output surface, the semiconductor sensor array comprises a plurality of semiconductor sensors arranged in an array.

## Claims

### Claim at position 1

1-20. (canceled)

### Claim 21

A positron emission tomography (PET) detector, the PET detector comprising:
a crystal array, the crystal array including a plurality of crystal elements arranged in a single layer, wherein each of the plurality of crystal elements includes a first surface that gamma rays enter into, a second surface opposite to the first surface, and a side surface between the first surface and the second surface; and
a semiconductor sensor array including a plurality of semiconductor sensors, the semiconductor sensor array being operably connected to a driver board, each of the plurality of semiconductor sensors having a light-receiving surface for receiving photons excited by the gamma rays from the second surfaces of the plurality of crystal elements and a contact surface that is opposite to the light-receiving surface and is in contact with the driver board directly;
wherein the second surfaces of the plurality of crystal elements are in contact with the light-receiving surfaces of the plurality of semiconductor sensors directly or through an adhesive material, the number of the plurality of crystal elements is more than the number of the plurality of semiconductor sensors, and the driver board completely covers the second surfaces of the plurality of crystal elements.

### Claim 22 (depends on 21)

The PET detector according to claim 21, wherein more than one of the plurality of crystal elements in the crystal array are in contact with one semiconductor sensor of the semiconductor sensor array.

### Claim 23 (depends on 21)

The PET detector according to claim 21, wherein at least one semiconductor sensor of the semiconductor sensor array is in contact with one of the plurality of crystal elements in the crystal array.

### Claim 24 (depends on 21)

The PET detector according to claim 21, wherein a center-of-gravity of the semiconductor sensor array coincides with a center-of-gravity of the crystal array.

### Claim 25 (depends on 21)

The PET detector according to claim 21, further comprising a first amplifier, wherein an input terminal of the first amplifier is connected with an output terminal of a semiconductor sensor in a predetermined row of the semiconductor sensor array.

### Claim 26 (depends on 21)

The PET detector according to claim 21, further comprising a second amplifier, wherein an input terminal of the second amplifier is connected with an output terminal of a semiconductor sensor in a predetermined column of the semiconductor sensor array.

### Claim 27 (depends on 21)

The PET detector according to claim 21, wherein the crystal elements have a same distance between the first surface and the second surface.

### Claim 28 (depends on 21)

The PET detector according to claim 21, wherein the crystal array further includes light-reflective materials mounted on at least a portion of the side surfaces of the plurality of crystal elements.

### Claim 29 (depends on 28)

The PET detector according to claim 28, wherein the light-reflective materials are set based on light-receiving areas of the semiconductor sensors, a relative location between the semiconductor sensors, and relative positioning between the semiconductor sensors and the crystal array.

### Claim 30 (depends on 28)

The PET detector according to claim 28, wherein the light-reflective materials mounted on the side surfaces of different crystal elements have different lengths along a direction vertical to the first surface.

### Claim 31 (depends on 28)

The PET detector according to claim 28, wherein the light-reflective materials mounted on the side surfaces of different crystal elements have a same length along a direction vertical to the first surface.

### Claim 32 (depends on 28)

The PET detector according to claim 28, wherein the light-reflective materials mounted on the side surfaces of different crystal elements have different areas.

### Claim 33 (depends on 21)

The PET detector according to claim 21, wherein one of the plurality of semiconductor sensors is in contact with nine crystal elements of the plurality of crystal elements.

### Claim 34 (depends on 21)

The PET detector according to claim 21, wherein the plurality of semiconductor sensors have a same size.

### Claim 35 (depends on 21)

The PET detector according to claim 21, wherein the light-receiving surface of one of the plurality of semiconductor sensors of the semiconductor sensor array completely covers one of the plurality of crystal elements of the crystal array.

### Claim 36 (depends on 21)

The PET detector according to claim 21, wherein the semiconductor sensor array have an edge defined by at least a portion of edges of the contact surfaces of peripheral semiconductor sensors of the semiconductor sensor array, the at least a portion of the edges does not face at least one semiconductor sensor of the semiconductor sensor array, at least a portion of an area of the driver board surrounded by the edge of the semiconductor sensor array completely covers the second surfaces of the plurality of crystal elements.

### Claim 37 (depends on 36)

The PET detector according to claim 36, wherein the crystal array has an outer side surface defined by at least a portion of the side surfaces of peripheral crystal elements of the crystal array, the at least a portion of the side surfaces of the peripheral crystal elements does not face at least one crystal element of the crystal array; and
wherein the edge of the semiconductor sensor array is aligned with the outer side surface of the crystal array along a direction vertical to the first surface.

### Claim 38 (depends on 21)

The PET detector according to claim 21, wherein the semiconductor sensor array have an edge defined by at least a portion of edges of the contact surfaces of peripheral semiconductor sensors of the semiconductor sensor array, the at least a portion of the edges does not face at least one semiconductor sensor of the semiconductor sensor array, an area surrounded by the edge of the semiconductor sensor array completely covers the second surfaces of the plurality of crystal elements.