# US 2019/0170884 A1 · Imaging panel and method for producing same

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- Number: US 2019/0170884 A1
- Document ID: US20190170884A1
- Status: Published application
- Kind: A1
- Application number: 16/322,899
- Filed: 2017-07-31
- Published: 2019-06-06
- Earliest claimed: 2016-08-03
- Assignees: Sharp Kabushiki Kaisha
- Applicants: Sharp Kabushiki Kaisha
- Inventors: KATSUNORI MISAKI
- Web page: https://patentgrep.com/patent/US20190170884A1

## CPC

- G01T 1/20182: {Modular detectors, e.g. tiled scintillators or tiled photodiodes (stacked detectors G01T1/20181)}
- A61B 6/00: Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment (instruments measuring radiation intensity for application in the field of nuclear medicine, e.g. in vivo counting, G01T1/161)
- G01N 23/04: and forming images of the material
- H04N 23/30: for generating image signals from X-rays
- H10F 30/2235: {the devices comprising Group IV amorphous materials}
- H10F 30/29: the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F 30/301: {the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation}
- H10F 39/016: {of thin-film-based image sensors}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/811: {Interconnections}
- H10F 77/147: {Shapes of bodies}
- A61B 6/4233: {using matrix detectors}
- H10F 39/805: {Coatings}
- Y02E 10/50: Photovoltaic [PV] energy
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Provided is an X-ray imaging panel in which leakage current in a photoelectric conversion layer can be suppressed, and a method for producing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays transmitted through an object. The imaging panel 1 includes, on a substrate 101, a thin film transistor 13, an insulating film 103 covering the thin film transistor 13, a photoelectric conversion layer 15 that converts the scintillation light into charges, an upper electrode 14b, a lower electrode 14a connected with the thin film transistor 13, and an upper electrode protection film 18 covering the upper electrode 14b. Ends of the upper electrode 14b are arranged in such a manner that each end thereof is arranged on an inner side of the photoelectric conversion layer 15 with respect to a corresponding end of the photoelectric conversion layer 15. Ends of the upper electrode protection film 18 are arranged in such a manner that each end thereof is arranged between a corresponding end of the upper electrode 14b and a corresponding end of the photoelectric conversion layer 15.

## Claims

### Claim 1

An imaging panel that generates an image based on scintillation light that is obtained from X-rays transmitted through an object, the imaging panel comprising:
a substrate;
a thin film transistor that is formed on the substrate;
an insulating film that covers the thin film transistor;
a photoelectric conversion layer that is provided on the insulating film, and converts the scintillation light into charges;
an upper electrode that is provided on the photoelectric conversion layer;
a lower electrode that is provided under the photoelectric conversion layer, and is connected with the thin film transistor; and
an upper electrode protection film that covers the upper electrode, above the photoelectric conversion layer,
wherein ends of the upper electrode are arranged in such a manner that each end thereof is arranged on an inner side of the photoelectric conversion layer with respect to a corresponding end of the photoelectric conversion layer, and
wherein ends of the upper electrode protection film are arranged in such a manner that each end thereof is arranged between a corresponding end of the upper electrode and a corresponding end of the photoelectric conversion layer.

### Claim 2 (depends on 1)

The imaging panel according to claim 1,
wherein the upper electrode protection film is made of silicon nitride.

### Claim 3 (depends on 1)

The imaging panel according to claim 1,
wherein the upper electrode protection film is made of silicon oxide.

### Claim 4 (depends on 1)

The imaging panel according to claim 1,
wherein the upper electrode protection film is made of silicon oxide nitride.

### Claim 5

A method for producing an imaging panel that generates an image based on scintillation light that is obtained from X-rays transmitted through an object, the producing method comprising:
forming a thin film transistor on a substrate;
forming a first insulating film and a second insulating film on the thin film transistor;
forming a first contact hole on a drain electrode of the thin film transistor so that the first contact hole passes through the first insulating film and the second insulating film;
forming, on the second insulating film, a first transparent electrode film as a lower electrode that is connected with the drain electrode through the first contact hole;
forming a first semiconductor layer of a first conductive type, an intrinsic amorphous semiconductor layer, and a second semiconductor layer of a second conductive type that is opposite to the first conductive type, in the stated order, as a photoelectric conversion layer on the first transparent electrode film;
forming an upper electrode on the second semiconductor layer;
forming an insulating film as an upper electrode protection film, on the upper electrode;
applying a resist on the insulating film, and etching the insulating film, the first semiconductor layer, the intrinsic amorphous semiconductor layer, and the second semiconductor layer, so as to form the photoelectric conversion layer and the upper electrode protection film;
removing the resist, and thereafter, carrying out a reduction treatment with respect to a surface of the photoelectric conversion layer;
forming a third insulating film that covers the upper electrode protection film, after the reduction treatment;
forming a second contact hole on the upper electrode so that the second contact hole passes through the third insulating film and the upper electrode protection film;
forming a fourth insulating film on the third insulating film except for a portion of the second contact hole;
forming a signal line for supplying a bias voltage, on the fourth insulating film;
forming, on the fourth insulating film, a transparent conductive film that connects the signal line and the upper electrode with each other through the second contact hole; and
forming a fifth insulating film that covers the transparent conductive film.

### Claim 6 (depends on 5)

The producing method according to claim 5,
wherein, as the reduction treatment, a reduction treatment using hydrogen fluoride is carried out.

### Claim 7 (depends on 6)

The producing method according to claim 6,
wherein, after the reduction treatment using hydrogen fluoride is carried out, before the third insulating film is formed, a hydrogen-gas-containing plasma treatment is carried out.

### Claim 8 (depends on 5)

The producing method according to claim 5,
wherein, as the reduction treatment, a reduction treatment using hydrogen gas is carried out.