# US 2019/0170883 A1 · Array substrate for digital x-ray detector, digital x-ray detector including the same, and method for manufacturing the same

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- Number: US 2019/0170883 A1
- Document ID: US20190170883A1
- Status: Published application
- Kind: A1
- Application number: 16/207,580
- Filed: 2018-12-03
- Published: 2019-06-06
- Earliest claimed: 2017-12-05
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Hyungil NA; Jungjune KIM; Hanseok LEE
- Web page: https://patentgrep.com/patent/US20190170883A1

## CPC

- G01T 1/20184: {Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/016: {of thin-film-based image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/805: {Coatings}
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

## Claims

### Claim 1

An array substrate for a digital X-ray detector, comprising:
a base substrate;
an active layer disposed over the base substrate, configured to include a channel region, a source region and a drain region, wherein the source region and the drain region are respectively formed at one side and the other side based on the channel region;
a gate insulation layer disposed over the active layer corresponding to the channel region;
a gate electrode disposed over the gate insulation layer;
an interlayer insulation layer disposed over the gate electrode and a drain region, configured to include a contact hole corresponding to the drain region;
a drain electrode disposed over the interlayer insulation layer, and connected to the active layer through the contact hole; and
a PIN diode in which a lower electrode, a PIN layer, and an upper electrode are stacked, configured to be in surface contact with the source region of the active layer.

### Claim 2 (depends on 1)

The array substrate of claim 1, wherein the source region of the active layer is in surface contact with an entire region of the lower electrode.

### Claim 3 (depends on 2)

The array substrate of claim 2, wherein the lower electrode is disposed over the source region of the active layer.

### Claim 4 (depends on 1)

The array substrate of claim 1, wherein the source region of the active layer is in surface contact with some regions of the lower electrode.

### Claim 5 (depends on 4)

The array substrate of claim 4, wherein a remaining region of the lower electrode, that is not in surface contact with the source region of the active layer, is disposed over the same layer as the active layer.

### Claim 6 (depends on 1)

The array substrate of claim 1, wherein the lower electrode corresponding to the PIN layer is planarized.

### Claim 7 (depends on 1)

The array substrate of claim 1, wherein the source region of the active layer is larger in size than the drain region.

### Claim 8 (depends on 1)

The array substrate of claim 1, further comprising:
a bias electrode disposed over the upper electrode such that the bias electrode is connected to the upper electrode,
wherein the bias electrode is disposed not to overlap the channel region.

### Claim 9 (depends on 1)

A digital X-ray detector, comprising:
an array substrate for the digital X-ray detector according to claim 1; and
a scintillator disposed over the array substrate.

### Claim 10

A method for manufacturing an array substrate for a digital X-ray detector, comprising:
forming an active layer, that includes not only a channel region but also a source region and a drain region respectively formed at one side and the other side based on the channel region, over a base substrate, and forming a gate insulation layer and a gate electrode over the active layer corresponding to the channel region;
forming an interlayer insulation layer that covers the gate electrode and the drain electrode and includes a first contact hole corresponding to the drain region;
forming a drain electrode being connected to the drain region through the first contact hole over the interlayer insulation layer, and forming a lower electrode over the source region such that the lower electrode is in surface contact with the active layer;
forming a PIN diode including a PIN layer and an upper electrode over the lower electrode; and
forming a protective layer having a second contact hole over the PIN diode, and forming a bias electrode, that is connected to the upper electrode through the second contact hole, over the protective layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the drain electrode and the lower electrode are formed by the same patterning process.

### Claim 12 (depends on 10)

The method of claim 10, wherein the source region of the active layer is larger in size than the drain region.

### Claim 13 (depends on 12)

The method of claim 12, wherein an overall region of the lower region is formed over the source region of the active layer.

### Claim 14 (depends on 10)

The method of claim 10, wherein:
some regions of the lower electrode are formed over the source region of the active layer; and
the remaining region of the lower electrode is formed over the same layer as the active layer.