# US 2019/0170671 A1 · Method and system for inspecting an euv mask

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2019/0170671 A1
- Document ID: US20190170671A1
- Status: Published application
- Kind: A1
- Application number: 16/147,277
- Filed: 2018-09-28
- Published: 2019-06-06
- Earliest claimed: 2011-05-20
- Assignees: Hermes Microvision, Inc.
- Applicants: Hermes Microvision, Inc.
- Inventors: Guochong WENG; Youjin WANG; Chiyan KUAN; Chung-Shih PAN
- Web page: https://patentgrep.com/patent/US20190170671A1

## CPC

- G01N 23/2251: using incident electron beams, e.g. scanning electron microscopy [SEM]
- H01J 37/026: {Means for avoiding or neutralising unwanted electrical charges on tube components}
- H01J 37/20: Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
- H01J 37/28: with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)}
- H05F 3/02: by means of earthing connections
- H01J 2237/004: Charge control of objects or beams
- H01J 2237/0041: Neutralising arrangements
- H01J 2237/0044: of objects being observed or treated
- H01J 2237/2007: Holding mechanisms
- H01J 2237/2008: specially adapted for studying electrical or magnetical properties of objects
- H01J 2237/202: Movement
- H01J 2237/2448: Secondary particle detectors
- H01J 2237/2602: Details
- H01J 2237/2811: Large objects
- H01J 2237/2813: characterised by the application
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H05F: STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY

## Abstract

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

## Claims

### Claim 1

(canceled)

### Claim 2

(canceled)

### Claim 3

(canceled)

### Claim 4

(canceled)

### Claim 5

(canceled)

### Claim 6

(canceled)

### Claim 7

(canceled)

### Claim 8

(canceled)

### Claim 9

(canceled)

### Claim 10

(canceled)

### Claim 11

(canceled)

### Claim 12

(canceled)

### Claim 13

(canceled)

### Claim 14

An apparatus for discharging an extreme ultraviolet (EUV) mask when the EUV mask is inspected by a charged particle beam inspection system, wherein the EUV mask comprises a reflective pattern layer and one or more conductive layers, the system comprising:
a grounding pin electrically coupled to an electrical ground, wherein the grounding pin is configured to contact the EUV mask when the EUV mask is inspected; and
a movable support structure onto which the grounding pin is attached, wherein the movable support structure is configured to:
move to a first position to enable the grounding pin to contact the EUV mask, and
move to a second position to enable the grounding pin to be separated from the EUV mask.

### Claim 15 (depends on 14)

The apparatus of claim 14, wherein the grounding pin is configured to contact the reflective pattern layer.

### Claim 16 (depends on 14)

The apparatus of claim 14, wherein the one or more conductive layers are electrically connected to the reflective pattern layers.

### Claim 17 (depends on 16)

The apparatus of claim 16, wherein the grounding pin is configured to contact the one or more conductive layers.

### Claim 18 (depends on 17)

The apparatus of claim 17, wherein the one or more conductive layers include a conductive layer on a bottom surface of the EUV mask, wherein the bottom surface is opposite to the reflective pattern layer.

### Claim 19 (depends on 17)

The apparatus of claim 17, wherein the one or more conductive layers include a conductive layer on a side of the EUV mask.

### Claim 20 (depends on 14)

The apparatus of claim 14, further comprising a slider placed below the movable support structure, wherein the slider is configured to slide back and forth to move the movable support structure between the first position and the second position.

### Claim 21 (depends on 20)

The apparatus of claim 20, wherein the slider has an uneven surface contacting the movable support structure.

### Claim 22 (depends on 14)

The apparatus of claim 14, further comprising a hollow cylinder wherein the movable support structure passes through the hollow cylinder and moves between the first position and the second position.