# US 2019/0169768 A1 · Tantalum carbide coated carbon material, manufacturing method thereof, and member for apparatus for manufacturing semiconductor single crystal > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0169768 A1 - Document ID: US20190169768A1 - Status: Published application - Kind: A1 - Application number: 16/208,482 - Filed: 2018-12-03 - Published: 2019-06-06 - Earliest claimed: 2017-12-04 - Assignees: Shin-Etsu Chemical Co., Ltd. - Applicants: Shin-Etsu Chemical Co., Ltd. - Inventors: Chikara MORI; Waichi YAMAMURA; Shoji KANO; Akihiro HIRATE - Web page: https://patentgrep.com/patent/US20190169768A1 ## CPC - C30B 29/36: Carbides - C04B 41/009: {characterised by the material treated} - C04B 41/5057: {Carbides} - C04B 41/87: Ceramics - C23C 16/32: Carbides - C23C 16/56: After-treatment - C30B 23/00: Single-crystal growth by condensing evaporated or sublimed materials - C30B 25/08: Reaction chambers; Selection of materials therefor - C30B 25/12: Substrate holders or susceptors - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes. ## Claims ### Claim 1 A tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, wherein in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a (200) plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes. ### Claim 2 (depends on 1) The tantalum carbide coated carbon material according to claim 1, wherein an arithmetic mean roughness Ra of a surface of the tantalum carbide coated film is 3.5 μm or less. ### Claim 3 (depends on 1) The tantalum carbide coated carbon material according to claim 1, wherein an arithmetic mean roughness Ra of a surface of the carbon base material is 4.0 μm or less. ### Claim 4 (depends on 1) The tantalum carbide coated carbon material according to claim 1, wherein the number of tantalum atoms contained in the tantalum carbide coated film is larger than the number of carbon atoms and is 1.2 times or smaller the number of carbon atoms. ### Claim 5 (depends on 1) The tantalum carbide coated carbon material according to claim 1, wherein the tantalum carbide coated film contains a chlorine atom at an atomic concentration of 0.01 atm % or more and 1.00 atm % or less. ### Claim 6 A member for an apparatus for manufacturing a semiconductor single crystal including a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, wherein in the tantalum carbide coated film, intensity of an X-ray diffraction line corresponding to a (200) plane with respect to an out-of-plane direction is larger than the intensity of the X-ray diffraction line corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes. ### Claim 7 (depends on 6) The member for an apparatus for manufacturing a semiconductor single crystal according to claim 6, wherein the member for an apparatus for manufacturing a semiconductor single crystal is used in an apparatus for manufacturing a SiC single crystal. ### Claim 8 (depends on 7) The member for an apparatus for manufacturing a semiconductor single crystal according to claim 7, wherein the member for an apparatus for manufacturing a semiconductor single crystal is a crucible or a guide member used in an apparatus for manufacturing a SiC single crystal by a sublimation recrystallization method. ### Claim 9 (depends on 7) The member for an apparatus for manufacturing a semiconductor single crystal according to claim 7, wherein the member for an apparatus for manufacturing a semiconductor single crystal is a susceptor or an inner wall member used in an apparatus for manufacturing a SiC single crystal by epitaxially growing the SiC single crystal by a chemical vapor deposition method. ### Claim 10 (depends on 6) The member for an apparatus for manufacturing a semiconductor single crystal according to claim 6, wherein the member for an apparatus for manufacturing a semiconductor single crystal has two or more locations where a concentration of tantalum atom is low on the surface of the tantalum carbide coated film. ### Claim 11 A method for manufacturing a tantalum carbide coated carbon material, comprising: preparing a carbon base material having an arithmetic surface roughness Ra of 4.0 μm or less; and coating at least a part of a surface of the carbon base material with a tantalum carbide coated film. ### Claim 12 (depends on 11) The method for manufacturing a tantalum carbide coated carbon material according to claim 11, wherein the carbon base material is coated with the tantalum carbide coated film while rotating about a rotation axis. ### Claim 13 (depends on 12) The method for manufacturing a tantalum carbide coated carbon material according to claim 12, wherein the tantalum carbide film is coated while revolving the rotation axis about a revolution axis. ### Claim 14 (depends on 11) The method for manufacturing a tantalum carbide coated carbon material according to claim 11, wherein the preparing includes supporting the carbon base material in a reaction chamber, the coating includes supplying a raw material gas that contains a compound containing a carbon atom and halogenated tantalum into the reaction chamber, and forming the tantalum carbide coated film by reacting the supplied raw material gas with a thermal CVD method. ### Claim 15 (depends on 14) The method for manufacturing a tantalum carbide coated carbon material according to claim 14, wherein in the supplying of the raw material gas, the temperature in the reaction chamber is set to be 850° C. or higher and 1200° C. or lower. ### Claim 16 (depends on 14) The method for manufacturing a tantalum carbide coated carbon material according to claim 14, wherein in the supplying of the raw material gas, the compound containing a carbon atom is methane (CH4), and halogenated tantalum is tantalum pentachloride (TaCl5), and a flow ratio of the methane to be supplied to the tantalum pentachloride is 2 or more and 20 or less. ### Claim 17 (depends on 11) The method for manufacturing a tantalum carbide coated carbon material according to claim 11, further comprising: annealing the carbon base material on which the tantalum carbide coated film is formed after the coating.