# US 2019/0169748 A1 · Heating stage and apparatus having the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0169748 A1 - Document ID: US20190169748A1 - Status: Published application - Kind: A1 - Application number: 16/200,650 - Filed: 2018-11-27 - Published: 2019-06-06 - Earliest claimed: 2017-11-27 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: P.Y. Chiou; Chih-Chun Huang; Ping-Ting Shen; L.S. Huang - Web page: https://patentgrep.com/patent/US20190169748A1 ## CPC - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C23C 16/45565: {Shower nozzles} - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - H10P 72/0432: {mainly by conduction} - H10P 72/7611: {characterised by edge profile or support profile} - H10P 72/7614: {characterised by a plurality of individual support members, e.g. support posts or protrusions} - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A heating stage includes a pedestal and a thermal-conductive plate. The thermal-conductive plate is located on the pedestal. The thermal-conductive plate has a central portion and an edge portion surrounding the central portion, and the edge portion comprises a first portion and a second portion connected to the first portion, where the first portion is sandwiched between the central portion and the second portion. A height of the second portion gradually decreases along a direction from the central portion toward the edge portion. ## Claims ### Claim 1 A heating stage, comprising: a pedestal; and a thermal-conductive plate, located on the pedestal, wherein the thermal-conductive plate has a central portion and an edge portion surrounding the central portion, and the edge portion comprises a first portion and a second portion connected to the first portion, wherein the first portion is sandwiched between the central portion and the second portion, and a height of the second portion gradually decreases along a direction from the central portion toward the edge portion. ### Claim 2 (depends on 1) The heating stage of claim 1, further comprising an angle between an extending plane of a top surface of the first portion and an extending plane of a top surface of the second portion, wherein the angle is approximately in a range of 0.1° to 2.0°. ### Claim 3 (depends on 1) The heating stage of claim 1, wherein a width of the first portion is less than a width of the second portion. ### Claim 4 (depends on 3) The heating stage of claim 3, wherein a ratio of the width of the first portion to the width of the second portion is approximately in a range of 57.1% to about 60.5%. ### Claim 5 (depends on 1) The heating stage of claim 1, further comprising pins located on the central portion of the thermal-conductive plate in a concentric arrangement or a matrix arrangement. ### Claim 6 (depends on 1) The heating stage of claim 1, further comprising pins randomly distributed and located on the central portion of the thermal-conductive plate. ### Claim 7 (depends on 1) The heating stage of claim 1, wherein a height difference is between a top surface of the central portion and a top surface of the first portion, and wherein the heating stage further comprises pins located on the central portion of the thermal-conductive plate, wherein a height of the pins is less than the height difference. ### Claim 8 (depends on 1) The heating stage of claim 1, further comprising grooves located on the central portion of the thermal-conductive plate, wherein the grooves evenly distributed over the thermal-conductive plate and penetrate a portion of the thermal-conductive plate. ### Claim 9 (depends on 1) The heating stage of claim 1, wherein a material of the thermal-conductive plate comprises stainless. ### Claim 10 A heating stage, comprising: a pedestal, having a first main surface and a second main surface opposite to the first main surface; a thermal-conductive plate, located on the first main surface of the pedestal, wherein the thermal-conductive plate has a central portion and an edge portion surrounding the central portion, the edge portion comprises a first portion and a second portion connected to the first portion, wherein the first portion is sandwiched between the central portion and the second portion, wherein a height of the second portion gradually decreases along a direction from the central portion toward the edge portion; a supporting shaft, located on the second main surface of the pedestal, wherein the pedestal is located between the thermal-conductive plate and the supporting shaft; and a through pipe, embedded in the supporting shaft. ### Claim 11 (depends on 10) The heating stage of claim 10, further comprising an angle between an extending plane of a top surface of the first portion and an extending plane of a top surface of the second portion, wherein the angle is approximately in a range of 0.1° to 2.0°. ### Claim 12 (depends on 10) The heating stage of claim 10, wherein a ratio of a width of the first portion to a width of the second portion is approximately in a range of 57.1% to about 60.5%. ### Claim 13 (depends on 10) The heating stage of claim 10, further comprising pins located on the central portion of the thermal-conductive plate in a concentric arrangement or a matrix arrangement. ### Claim 14 (depends on 10) The heating stage of claim 10, further comprising grooves located on the central portion of the thermal-conductive plate, wherein the grooves penetrate a portion of the thermal-conductive plate and spatially communicate with the through pipe. ### Claim 15 (depends on 10) The heating stage of claim 10, wherein the through pipe penetrates through the supporting shaft, the pedestal, and the thermal-conductive plate, and the through pipe has a first-end opening and a second-end opening, wherein the first-end opening is at a top surface of the central portion. ### Claim 16 An apparatus for processing a semiconductor wafer, comprising: a housing, having a top surface, a bottom surface opposite to the top surface, and a sidewall connecting the top surface and the bottom surface; a shower head, located inside the housing and located on the top surface; and a heating stage, at least partially located inside the housing and located on the bottom surface, wherein the heating stage comprises a pedestal and a thermal-conductive plate located on the pedestal, wherein the thermal-conductive plate has a central portion and an edge portion surrounding the central portion, and the edge portion comprises a first portion and a second portion connected to the first portion, wherein the first portion is sandwiched between the central portion and the second portion, and a height of the second portion gradually decreases along a direction from the central portion toward the edge portion. ### Claim 17 (depends on 16) The apparatus of claim 16, further comprising an angle between an extending plane of a top surface of the first portion and an extending plane of a top surface of the second portion, wherein the angle is approximately in a range of 0.1° to 2.0°. ### Claim 18 (depends on 16) The apparatus of claim 16, further comprising pins located on the central portion of the thermal-conductive plate in a concentric arrangement or a matrix arrangement. ### Claim 19 (depends on 16) The apparatus of claim 16, further comprising a through pipe penetrating through the heating stage and having a first-end opening and a second-end opening opposite to the first-end opening, wherein the first-end opening is located inside the housing and at a top surface of the central portion. ### Claim 20 (depends on 19) The apparatus of claim 19, further comprising a gas evacuation device and a gas supply device, wherein the gas evacuation device and the gas supply device connected to the second-end opening of the through pipe.