# US 2019/0169737 A1 · Pvd processing method and pvd processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0169737 A1 - Document ID: US20190169737A1 - Status: Published application - Kind: A1 - Application number: 16/202,238 - Filed: 2018-11-28 - Published: 2019-06-06 - Earliest claimed: 2017-12-05 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Koji Maeda; Hiroyuki Yokohara; Hiroshi Sone; Tetsuya Miyashita - Web page: https://patentgrep.com/patent/US20190169737A1 ## CPC - C23C 14/3464: {using more than one target (C23C14/56 takes precedence)} - C23C 14/042: {using masks} - C23C 14/081: {of aluminium, magnesium or beryllium} - C23C 14/185: {by cathodic sputtering} - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target. ## Claims ### Claim 1 A PVD processing method comprising: a first process of making an opening of a shield, which is provided between a first target containing a metal oxide as a main component and a second target containing a metal constituting the metal oxide as a main component and a stage on which a substrate as a film formation object is placed, coincide with the first target so as to expose the first target to the stage, and bringing the opening close to the first target; a second process of performing sputtering using the first target; a third process of making the opening of the shield coincide with the second target so as to expose the second target to the stage, and bringing the opening close to the second target; and a fourth process of performing sputtering using the second target. ### Claim 2 (depends on 1) The PVD processing method of claim 1, further comprising: a fifth process of moving the shield to a position located away from the first target and the second target; and a sixth process of performing sputtering using the second target after the fifth process. ### Claim 3 (depends on 2) The PVD processing method of claim 2, wherein, in the sixth process, the sputtering is performed using the second target in each of a state where the second target is exposed to the stage via the opening and a state where the second target is shielded by the shield. ### Claim 4 (depends on 2) The PVD processing method of claim 2, further comprising: a seventh process of performing sputtering using the first target in a state where the shield is at a position located away from the first target and the second target after the fourth process or the sixth process. ### Claim 5 (depends on 4) The PVD processing method of claim 4, wherein, in the seventh process, the sputtering is performed using the first target in each of a state where the first target is exposed to the stage via the opening and a state where the first target is shielded by the shield. ### Claim 6 (depends on 4) The PVD processing method of claim 4, further comprising: an eighth process of making the opening of the shield coincide with the first target so as to expose the second target to the stage, and bringing the opening close to the first target after the sixth process or the seventh process; and a ninth process of performing sputtering using the first target. ### Claim 7 (depends on 4) The PVD processing method of claim 4, wherein the third to seventh processes are further performed before the first process. ### Claim 8 (depends on 1) The PVD processing method of claim 1, wherein the metal oxide is magnesium oxide, and the metal constituting the metal oxide is magnesium. ### Claim 9 A PVD processing apparatus comprising: a first cathode having a first target containing a metal oxide as a main component; a second cathode having a second target containing a metal constituting the metal oxide as a main component; a holding unit on which the first cathode and the second cathode are disposed; a stage on which a substrate as a film formation object is placed; a shield provided between the holding unit and the stage and having an opening; a movement mechanism configured to move the shield toward and away from the first target and the second target; and a rotation mechanism configured to rotate the shield about a rotation axis so as to expose one of the first cathode and the second cathode and to shield remaining one of the first cathode and the second cathode with respect to the stage. ### Claim 10 (depends on 9) The PVD processing apparatus of claim 9, wherein two first cathode and two second cathode are held on the holding unit, and the first cathodes and the second cathodes are alternately arranged on the holding unit in a circumferential direction around the rotation axis. ### Claim 11 (depends on 10) The PVD processing apparatus of claim 10, wherein the shield has two openings, and the openings are rotated by the rotation mechanism such that either the two first targets or the two second targets are exposed to the stage and remaining targets are shielded with respect to the stage. ### Claim 12 (depends on 9) The PVD processing apparatus of claim 9, wherein the shield having a heater embedded therein so as to heat the shield to a predetermined temperature.