# US 2019/0169736 A1 · Gas barrier film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0169736 A1 - Document ID: US20190169736A1 - Status: Published application - Kind: A1 - Application number: 16/270,583 - Filed: 2019-02-07 - Published: 2019-06-06 - Earliest claimed: 2013-02-20 - Assignees: Toyobo Co., Ltd. - Applicants: Toyobo Co., Ltd. - Inventors: Sachi MURAKAMI; Kyoko INAGAKI; Kiyoshi ISEKI - Web page: https://patentgrep.com/patent/US20190169736A1 ## CPC - C23C 14/081: {of aluminium, magnesium or beryllium} - C08J 7/048: Forming gas barrier coatings - C08J 7/06: with compositions not containing macromolecular substances - C08J 2367/02: Polyesters derived from dicarboxylic acids and dihydroxy compounds; (C08J2367/06 takes precedence) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29) ## Abstract The present invention has been made in view of the above-mentioned conventional technical problems. That is, an object of the present invention is to provide a gas barrier film excellent in barrier properties to oxygen and water vapor, preferably excellent in water vapor barrier properties after being left to stand in a humidified environment for a prescribed period. ## Claims ### Claim 1 A method for manufacturing a rolled gas barrier film comprising an inorganic compound thin film formed on at least one surface of a plastic film, which comprises; a step of forming the inorganic compound thin film by heating and vaporizing aluminum oxide particles having a particle size of 2 to 6 mm and magnesium oxide particles having a particle size of 2 to 6 mm to make vapors separately, mixing the vapors in vapor phase, and then depositing the vapors on at least one surface of the plastic film; and a step of winding the plastic film on which the inorganic compound thin film is formed to make the rolled gas barrier film; wherein the inorganic compound thin film contains aluminum oxide, magnesium oxide, and optionally other compounds, the ratio of magnesium oxide is not less than 5 mass % and not more than 90 mass % of the total mass of aluminum oxide and magnesium oxide contained in the inorganic compound thin film, the thickness of the inorganic compound thin film is 5 to 80 nm, the gas barrier film has a rate of change of water vapor transmission rate (ΔWVTR) of not more than 50% after being treated at 40° C. and 90% RH for 50 hours. ### Claim 2 (depends on 1) The method for manufacturing the gas barrier film according to claim 1, the inorganic compound thin film is formed by a vacuum vapor deposition method. ### Claim 3 (depends on 2) The method for manufacturing the gas barrier film according to claim 2, the inorganic compound thin film is formed by an electron beam heating vapor deposition method. ### Claim 4 (depends on 1) The method for manufacturing the gas barrier film according to claim 1, wherein the magnesium oxide is present in an amount of (i) not less than 5 mass % and not more than 25 mass % or (ii) not less than 70 mass % and not more than 90 mass % of the total mass of aluminum oxide and magnesium oxide contained in the inorganic compound thin film. ### Claim 5 (depends on 2) The method for manufacturing the gas barrier film according to claim 2, wherein the magnesium oxide is present in an amount of (i) not less than 5 mass % and not more than 25 mass % or (ii) not less than 70 mass % and not more than 90 mass % of the total mass of aluminum oxide and magnesium oxide contained in the inorganic compound thin film. ### Claim 6 (depends on 3) The method for manufacturing the gas barrier film according to claim 3, wherein the magnesium oxide is present in an amount of (i) not less than 5 mass % and not more than 25 mass % or (ii) not less than 70 mass % and not more than 90 mass % of the total mass of aluminum oxide and magnesium oxide contained in the inorganic compound thin film. ### Claim 7 (depends on 1) The method for manufacturing the gas barrier film according to claim 1, wherein the thickness of the plastic film is not more than 50 μm. ### Claim 8 (depends on 2) The method for manufacturing the gas barrier film according to claim 2, wherein the thickness of the plastic film is not more than 50 μm. ### Claim 9 (depends on 3) The method for manufacturing the gas barrier film according to claim 3, wherein the thickness of the plastic film is not more than 50 μm.