# US 2019/0169461 A1 · Pattern formation method, block copolymer, and pattern formation material > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2019/0169461 A1 - Document ID: US20190169461A1 - Status: Published application - Kind: A1 - Application number: 16/047,419 - Filed: 2018-07-27 - Published: 2019-06-06 - Earliest claimed: 2017-12-06 - Assignees: Toshiba Memory Corporation - Applicants: Toshiba Memory Corporation - Inventors: Norikatsu Sasao; Koji Asakawa; Tomoaki Sawabe; Shinobu Sugimura - Web page: https://patentgrep.com/patent/US20190169461A1 ## CPC - C09D 153/00: Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers - B05D 5/00: Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures - C08F 12/08: Styrene - C08F 20/28: containing no aromatic rings in the alcohol moiety - C09D 125/06: Polystyrene - C09D 133/14: of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02) - C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element. ## Claims ### Claim 1 A pattern formation method, comprising: a preparation process of preparing a pattern formation material including a block copolymer including a first block and a second block, the first block including a first main chain and a plurality of first side chains, at least one of the first side chains including a plurality of carbonyl groups; a block copolymer layer formation process of forming a block copolymer layer on a first member, the block copolymer layer including the pattern formation material and including a first region and a second region, the first region including the first block, the second region including the second block; and a contact process of causing the block copolymer layer to contact a metal compound including a metallic element. ### Claim 2 (depends on 1) The method according to claim 1, wherein the block copolymer layer formation process includes phase separation of the first block and the second block. ### Claim 3 (depends on 1) The method according to claim 1, wherein a direction from the first region toward the second region is along the first member. ### Claim 4 (depends on 1) The method according to claim 1, wherein the first block includes at least one selected from the group consisting of an acrylic acid ester structure and a methacrylic acid ester structure. ### Claim 5 (depends on 1) The method according to claim 1, wherein the first block includes at least one selected from the group consisting of acetonyl acrylic acid ester and acetonyl methacrylic acid ester. ### Claim 6 (depends on 1) The method according to claim 1, wherein the second block includes a second main chain and a plurality of second side chains, at least one of the second side chain not including a plurality of carbonyl groups. ### Claim 7 (depends on 1) The method according to claim 1, wherein the second block includes a second main chain and a plurality of second side chains, and at least one of the second side chains includes at least one selected from the group consisting of benzene, naphthalene, and methyl. ### Claim 8 (depends on 1) The method according to claim 1, wherein the second block includes a second main chain, and the second main chain includes at least one selected from the group consisting of a double bond and an ether bond. ### Claim 9 (depends on 1) The method according to claim 1, wherein the second block does not include a carbonyl group, or the second block includes a carbonyl group, and a ratio of a concentration of the carbonyl group included in the second block to a concentration of the carbonyl group included in the first block is 0.5 or less. ### Claim 10 (depends on 1) The method according to claim 1, wherein the contact process includes causing the block copolymer layer to contact at least one of a liquid including the metal compound or a gas including the metal compound. ### Claim 11 (depends on 1) The method according to claim 1, wherein the metallic element includes at least one selected from the group consisting of aluminum, zinc, titanium, and tungsten. ### Claim 12 (depends on 1) The method according to claim 1, including removing at least a portion of the second region and removing at least a portion of the first member after the contact process, the at least a portion of the first member not overlapping the first region. ### Claim 13 A block copolymer, comprising: a first block; and a second block, the first block including a first main chain and a plurality of first side chains, at least one of the first side chains including a plurality of carbonyl groups, a number of carbon atoms included in the at least one of the first side chains being not less than 3 but less than 7, a number of oxygen atoms included in the at least one of the first side chains being not less than 2 but less than 5, a terminal of the at least one of the first side chains being a hydrocarbon. ### Claim 14 (depends on 13) The block copolymer according to claim 13, wherein the first block includes at least one selected from the group consisting of an acrylic acid ester structure and a methacrylic acid ester structure. ### Claim 15 (depends on 13) The block copolymer according to claim 13, wherein the first block includes at least one selected from the group consisting of acetonyl acrylic acid ester and acetonyl methacrylic acid ester. ### Claim 16 (depends on 13) The block copolymer according to claim 13, wherein the second block includes a second main chain and a plurality of second side chains, and at least one of the second side chains does not include a plurality of carbonyl groups. ### Claim 17 (depends on 13) The block copolymer according to claim 13, wherein the second block includes a second main chain and a plurality of second side chains, and at least one of the second side chains includes at least one selected from the group consisting of benzene, naphthalene, and methyl. ### Claim 18 (depends on 13) The block copolymer according to claim 13, wherein the second block includes a second main chain, and the second main chain includes at least one selected from the group consisting of a double bond and an ether bond. ### Claim 19 (depends on 13) The block copolymer according to claim 13, wherein the second block does not include a carbonyl group, or the second block includes a carbonyl group, and a ratio of a concentration of the carbonyl group included in the second block to a concentration of the carbonyl group included in the first block is 0.5 or less. ### Claim 20 (depends on 13) A pattern formation material, comprising: the block copolymer according to claim 13; and a solvent.