# US 2019/0168356 A1 · High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives

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- Number: US 2019/0168356 A1
- Document ID: US20190168356A1
- Status: Published application
- Kind: A1
- Application number: 15/828,601
- Filed: 2017-12-01
- Published: 2019-06-06
- Earliest claimed: 2017-12-01
- Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicants: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Inventors: Bainian Qian; Kancharla-Arun K. Reddy; George C. Jacob; Marty W. DeGroot
- Web page: https://patentgrep.com/patent/US20190168356A1

## CPC

- B24B 37/24: characterised by the composition or properties of the pad materials
- B24B 37/044: {characterised by the composition of the lapping agent}
- B24B 37/22: characterised by a multi-layered structure
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS

## Abstract

A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.

## Claims

### Claim 1

A chemical mechanical (CMP) polishing pad for polishing a substrate chosen from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate comprises a polishing layer adapted for polishing the substrate which is a polyurethane reaction product of a reaction mixture comprising (i) a curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and (ii) a polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%.

### Claim 2 (depends on 1)

The CMP polishing pad as claimed in claim 1, comprising as the (i) curative in the reaction mixture from 15 to less than 20 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400 and from more than 80 to 85 wt. % of an aromatic diamine.

### Claim 3 (depends on 1)

The CMP polishing pad as claimed in claim 1, comprising in the reaction mixture as the (i) curative from 15 to 30 wt. % of an amine initiated polyol having an average of 4 hydroxyl groups.

### Claim 4 (depends on 1)

The CMP polishing pad as claimed in claim 1, wherein in the (i) curative of the reaction mixture, the amine initiated polyol is an ethylene diamine or aminoethylethanolamine (AEEA) initiated polyol.

### Claim 5 (depends on 1)

The CMP polishing pad as claimed in claim 1, wherein the gel time of the reaction mixture ranges from 2 to 15 minutes and in the (i) curative, the aromatic diamine is chosen from 4,4′-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA); 4,4′-methylene-bis-o-chloroaniline (MbOCA); diethyl toluene diamines; tert-butyl toluene diamines; chlorotoluenediamines; dimethylthio-toluene diamines (DMTDA); 1,2-bis(2-aminophenylthio)ethane; trimethylene glycol di-p-amino-benzoate; tert-amyl toluenediamines; tetramethyleneoxide di-p-aminobenzoate; (poly)propyleneoxide di-p-aminobenzoates; chloro diaminobenzoates; methylene dianilines; isophorone diamine; 1,2-diaminocyclohexane; bis(4-aminocyclohexyl)methane; 4,4′-diaminodiphenyl sulfone; m-phenylenediamine; xylene diamines; 1,3-bis(aminomethyl cyclohexane); and mixtures thereof.

### Claim 6 (depends on 1)

The CMP polishing pad as claimed in claim 1, comprising in the reaction mixture (ii) a polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 8 to 9.5 wt. %.

### Claim 7 (depends on 1)

The CMP polishing pad as claimed in claim 1, wherein in the reaction mixture the (ii) polyisocyanate prepolymer is formed from an aromatic diisocyanate; an aromatic isocyanurate from a diisocyanate; aromatic diisocyanates mixed with up to 50 wt. % of an alicyclic diisocyanate, based on the total weight of the aromatic and any alicyclic diisocyanates; or a mixture of aromatic diisocyanates; and from a polyol chosen from polypropylene glycol (PPG), polytetramethylene ether glycol (PTMEG), polyethylene glycol, or a mixture thereof.

### Claim 8 (depends on 1)

The CMP polishing pad as claimed in claim 1, wherein the reaction mixture is “substantially water free”, based on the total weight of the reaction mixture.

### Claim 9 (depends on 1)

The CMP polishing pad as claimed in claim 1, wherein the polishing pad or polishing layer contains no microelements and the reaction mixture further comprises a surfactant.

### Claim 10 (depends on 1)

The CMP polishing pad as claimed in claim 1, wherein the polishing layer has a tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature, and which has a ratio of torsional storage modulus (G′) measured at 30° C. to torsional storage modulus (G′) measured at 90° C. of from 5 to 45.