GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER
AssigneeHRL Laboratories, LLC
InventorsBrian HUGHES, Rongming CHU
Life of this patent
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Abstract
A half bridge circuit includes a sapphire substrate, a GaN upper switch on the sapphire substrate, a GaN lower switch on the sapphire substrate and coupled to the GaN upper switch, a first conductor coupled to the upper switch, a second conductor coupled to the lower switch, and a capacitor. A portion of the first conductor and a portion of the second conductor are on a plane vertically separated from the upper switch and the lower switch by a height, and the capacitor is coupled between the portion of the first conductor and the portion of the second conductor.
Claims9
1-15. (canceled)
A method for fabricating a half bridge circuit comprising:
- growing GaN epitaxy on a sapphire wafer;
- fabricating an upper switch and a lower switch in the GaN epitaxy;
- forming a first gate driver in the GaN epitaxy;
- forming a second gate driver in the GaN epitaxy;
- forming a first metal post;
- forming a second metal post;
- forming a first conductor coupled to the upper switch, wherein a portion of the first conductor is supported by the first and second metal posts on a plane vertically separated from the upper switch and the lower switch by a height;
- forming a second conductor coupled to the lower switch, wherein a portion of the second conductor is supported by the first and second metal posts on a plane vertically separated from the upper switch and the lower switch by a height;
- providing a capacitor coupled between the portion of the first conductor and the portion of the second conductor;
- and
- forming interconnects between the first gate driver, the upper switch, the second gate driver, the lower switch, the first metal post, the second metal post, the first conductor, and the second conductor to form one or more half bridge integrated circuits.
Dependencies are inferred from the claim text.