Power amplifier module
AssigneeMurata Manufacturing Co., Ltd.
InventorsShota Ishihara, Yuji Shintomi, Satoshi Matsumura
Life of this patent
Estimating the term…
Abstract
A power amplifier module includes an amplifier that amplifies an input signal and outputs the amplified signal, a harmonic termination circuit that is disposed subsequent to the amplifier and that attenuates a harmonic component of the amplified signal, the harmonic termination circuit including at least one field effect transistor (FET), and a control circuit that controls a gate voltage of the at least one FET to adjust a capacitance value of a parasitic capacitance of the at least one FET. The control circuit adjusts the capacitance value of the parasitic capacitance of the at least one FET, and thereby a resonance frequency of the harmonic termination circuit is adjusted.
Claims11
A power amplifier module comprising:
- an amplifier that amplifies an input signal and outputs the amplified signal;
- a harmonic termination circuit that is disposed subsequent to the amplifier and that attenuates a harmonic component of the amplified signal, the harmonic termination circuit comprising at least one field effect transistor;
- and
- a control circuit configured to control a gate voltage of the at least one field effect transistor thereby adjusting a parasitic capacitance of the at least one field effect transistor,
- wherein by adjusting the parasitic capacitance of the at least one field effect transistor, the control circuit thereby also adjusts a resonance frequency of the harmonic termination circuit,
- wherein the harmonic termination circuit comprises a capacitor and a first inductor that are connected in series between an output terminal of the amplifier and a reference potential, and a second inductor connected in parallel with the first inductor, and
- wherein the control circuit is adjusted by an eFuse cell.
A power amplifier module comprising:
- an amplifier that amplifies an input signal and outputs the amplified signal;
- a harmonic termination circuit that is disposed subsequent to the amplifier and that attenuates a harmonic component of the amplified signal, the harmonic termination circuit comprising at least one field effect transistor;
- and
- a control circuit configured to control a gate voltage of the at least one field effect transistor thereby adjusting a parasitic capacitance of the at least one field effect transistor,
- wherein by adjusting the parasitic capacitance of the at least one field effect transistor, the control circuit thereby also adjusts a resonance frequency of the harmonic termination circuit is adjusted,
- wherein the harmonic termination circuit comprises a capacitor and a first inductor that are connected in series between an output terminal of the amplifier and a reference potential, and
- wherein the control circuit is adjusted by an eFuse cell.
Dependencies are inferred from the claim text.