Resistive random access memory with metal fin electrode

A memory device comprising:

• a lower electrode with a rectangular cross-sectional geometry present on a lower contact line, the lower electrode having an upper portion extending above an upper surface of a first dielectric layer, wherein the upper portion of the lower electrode has upper corners of the rectangular cross-sectional geometry that are exposed;
• a metal oxide layer having a conformal thickness present on sidewalls of the upper corners of the rectangular cross-sectional geometry for the lower electrode, the metal oxide layer being present on at least the corners of the lower electrode that extend above the first dielectric layer;
• an upper electrode present on the metal oxide layer, the upper electrode being separated from an entirety of the lower electrode by the metal oxide layer, wherein the corners localize filament formation in the metal oxide layer;
• and
• an upper contact line present on the upper electrode, wherein the lower contact line and the upper contact line are orientated to provide a cross-bar architecture.

A method forming a memory device comprising:

• forming lower contact lines in a trench formed in a dielectric layer;
• recessing the lower contact lines within the trench to form a recess at an upper portion of the trench;
• forming a lower electrode in the recess at the upper portion of the trench;
• recessing the first dielectric layer to expose corners of the lower electrode;
• and
• forming a stack of a metal oxide layer and an upper electrode on a portion of the lower electrode exposed by said recessing the dielectric layer, wherein said corners localize filament formation in the metal oxide layer.