Back to results
US 2019/0165268 A1Published application
Resistive memory device and operation method thereof
AssigneeSeoul National University R&Db Foundation
InventorsByung-Gook Park, Min-Hwi Kim, Sungjun Kim
Life of this patent
Estimating the term…
Abstract
A resistive memory device and a method of operation of the resistive memory device are provided. The resistance memory device includes a resistance change layer that has a tunneling film and has many states. The conductance is changed symmetrically in a SET operation and a RESET operation. Thus, the resistive memory device can be used for efficient and accurate data storage as a RRAM in a high-capacity memory array, and as a synaptic device controlling the connection strength of a synapse in a neuromorphic system.
Claims12
A resistive memory device comprising:
- a bottom electrode formed by doping impurities into a semiconductor material;
- a resistance change layer formed on the bottom electrode;
- and
- a top electrode formed on the resistance change layer,
- wherein the resistance change layer comprises an oxide film formed on the bottom electrode and a nitride film formed on the oxide film.
2 more elements
Dependencies are inferred from the claim text.