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US 2019/0165267 A1Published application
Resistive random access memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Mo, Shih-Chi Kuo
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Abstract
A memory cell includes: a first electrode contact formed as a cylinder shape that extends along a first direction; a resistive material layer comprising a first portion that extends along the first direction and surrounds the first electrode contact; and a second electrode contact coupled to the resistive material layer, wherein the second electrode contact surrounds the first electrode contact and the first portion of the resistive material layer.
Claims20
A memory cell, comprising:
- a first electrode contact formed as a cylinder shape that extends along a first direction;
- a resistive material layer comprising a first portion that extends along the first direction and surrounds the first electrode contact;
- and
- a second electrode contact, wherein the second electrode contact surrounds the first electrode contact and the first portion of the resistive material layer when viewed from the top.
1 more element
A memory cell comprising:
- a first electrode contact formed as a cylinder shape that extends along a first direction;
- a resistive material layer surrounding the first electrode contact, wherein the resistive material layer comprises a first portion that extends along the first direction and a second portion that extends along a second direction;
- and
- a second electrode contact surrounding the resistive material layer, wherein the second electrode contact is coupled to both the first and second portions of the resistive material layer.
1 more element
A memory device, comprising:
- a first memory cell and a second memory cell share a common electrode contact,
- wherein the first memory cell comprises:
- a first portion of the common electrode contact;
- a first resistive material layer comprising a first portion surrounding the first portion of the common electrode contact;
- and
- a first electrode contact comprising at least a portion surrounding the first portion of the common electrode contact and the first portion of the first resistive material layer, and wherein the second memory cell comprises:
- a second portion of the common electrode contact;
- a second resistive material layer comprising a first portion surrounding the second portion of the common electrode contact;
- and
- a second electrode contact comprising at least a portion surrounding the second portion of the common electrode contact and the first portion of the second resistive material layer.
7 more elements
Dependencies are inferred from the claim text.