Structure and formation method of memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHai-Dang TRINH, Hsing-Lien LIN, Cheng-Yuan TSAI
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Abstract
A structure and formation method of a semiconductor device structure is provided. The method includes forming a lower electrode layer over a semiconductor substrate and forming a data storage layer over the lower electrode layer. The method also includes forming an ion diffusion barrier layer over the data storage layer and forming a capping layer over the ion diffusion barrier layer. The ion diffusion barrier layer is a metal material doped with nitrogen, carbon, or a combination thereof. The capping layer is made of a metal material. The method further includes forming an upper electrode layer over the capping layer.
Claims21
A method for forming a semiconductor device structure, comprising:
- forming a lower electrode layer over a semiconductor substrate;
- forming a data storage layer over the lower electrode layer;
- forming an ion diffusion barrier layer over the data storage layer, wherein the ion diffusion barrier layer is a metal material doped with nitrogen, carbon, or a combination thereof;
- forming a capping layer over the ion diffusion barrier layer, wherein the capping layer is made of a metal material;
- and
- forming an upper electrode layer over the capping layer.
A method for forming a semiconductor device structure, comprising:
- forming a lower electrode layer over a semiconductor substrate;
- forming a resistance variable layer over the lower electrode layer;
- forming a barrier layer over the resistance variable layer;
- forming a capping layer over the barrier layer, wherein the capping layer is made of a metal material, and the capping layer is in direct contact with the barrier layer;
- and
- forming an upper electrode layer over the capping layer.
16-20. (canceled)
A method for forming a semiconductor device structure, comprising:
- forming a lower electrode layer over a semiconductor substrate;
- forming a resistance variable layer over the lower electrode layer;
- forming an ion diffusion barrier layer directly on the data storage layer, wherein the ion diffusion barrier layer is a conductive material doped with nitrogen, carbon, or a combination thereof;
- forming a capping layer directly on the ion diffusion barrier layer, wherein the capping layer comprises a metal material;
- and
- forming an upper electrode layer over the capping layer.
Dependencies are inferred from the claim text.