Novel phase change random access memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsu Yen, Yu-Chuan Hsu, Chen-Hui Yang
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Abstract
A memory device includes: a first conductive column structure extending through a first dielectric layer, wherein the first conductive column structure comprises a shell portion wrapping a core structure filled with a dielectric material and an end portion that is coupled to one end of the shell portion and disposed below the core structure; and a first phase change material layer formed over the first dielectric layer, wherein a lower boundary of the first phase change material layer contacts at least a first portion of the other end of the shell portion of the first conductive column structure.
Claims20
A memory device, comprising:
- a first conductive column structure extending through a first dielectric layer, wherein the first conductive column structure comprises a shell portion wrapping a core structure filled with a dielectric material and an end portion that is coupled to one end of the shell portion and disposed below the core structure;
- and
- a first phase change material layer formed over the first dielectric layer,
- wherein a lower boundary of the first phase change material layer contacts at least a first portion of the other end of the shell portion of the first conductive column structure.
A memory device, comprising:
- a bottom electrode;
- a phase change material layer;
- and
- a heater structure, coupled between the bottom electrode and the phase change material layer, that lines a trench thereby causing a first portion of the heater structure to contact the phase change material layer at one end and wrap a dielectric material directly disposed below the phase change material layer.
A method, comprising:
- forming a first dielectric layer over a bottom electrode;
- forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode;
- forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode;
- filling the first void with the first dielectric layer;
- and
- forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.
Dependencies are inferred from the claim text.