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US 2019/0165264 A1Published application
Pcram structure with selector device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJau-Yi WU
Life of this patent
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Abstract
A memory device includes a substrate; a bottom electrode disposed over the substrate; an insulating layer disposed over the bottom electrode, the insulating layer having a through hole defined in the insulating layer; a heater disposed in the through hole; a phase change material layer disposed over the heater; a selector layer disposed over the phase change material layer; and a metal layer disposed over the selector layer. The metal layer is wider than the phase change material layer.
Claims20
A memory device comprising:
- a substrate;
- a bottom electrode disposed over the substrate;
- an insulating layer disposed over the bottom electrode, the insulating layer having a through hole (h) defined in the insulating layer;
- a heater disposed in the through hole (h);
- a phase change material layer disposed over the heater;
- a selector layer disposed over the phase change material layer;
- and
- a metal layer disposed over the selector layer.
5 more elements
A memory device comprising:
- a substrate;
- a bottom electrode disposed over the substrate;
- a first heater disposed over the bottom electrode;
- a first phase change material layer disposed over the first heater;
- a first selector layer disposed over the first phase change material layer;
- a metal layer disposed over the first selector layer;
- a second selector layer disposed over the metal layer;
- a second heater and a second phase change material layer disposed over the second selector layer;
- an upper electrode disposed over the second heater and the second phase change material layer;
- and
- an insulating layer between the bottom electrode and the upper electrode, enclosing, with the bottom and upper electrodes, the first and second heaters, the first and second selector layers, the first and second phase change material layers, and the metal layer.
8 more elements
A method of manufacturing a memory device, comprising:
- forming a bottom electrode over a substrate;
- forming an insulating layer over the bottom electrode;
- forming a through hole (h) in the insulating layer;
- forming a heater in the through hole (h);
- forming a phase change material layer over the heater;
- forming a selector layer over the phase change material layer;
- and
- forming a metal layer over the selector layer.
5 more elements
Dependencies are inferred from the claim text.