Methods of forming a memory structure
AssigneeMicron Technology, Inc.
InventorsAndrew J. Hansen, James A. Cultra
Life of this patent
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Abstract
A semiconductor device includes memory cells, a first dielectric liner material overlying side surfaces of the memory cells, a high-k dielectric material overlying side surfaces of the first dielectric liner material, a second dielectric liner material overlying side surfaces of the high-k dielectric material, and an additional dielectric material overlying side surfaces of the second dielectric liner material. A memory structure, an electronic system, and a method of forming a memory structure are also described.
Claims20
A method of forming a memory structure, comprising:
- forming a first dielectric liner material over memory cells;
- forming a high-k dielectric material over the first dielectric liner material;
- forming a second dielectric liner material over the high-k dielectric material;
- and
- forming an additional dielectric material over the second dielectric liner material.
A method of forming a memory structure, comprising forming memory cells over at least one conductive line structure, each memory cell comprising:
- a first electrode structure over the at least one conductive line structure;
- a select device structure over the first electrode structure;
- a storage element structure on or over the select device structure;
- and
- a third electrode structure on or over the storage element structure;
- conformally forming a dielectric liner material on and between the memory cells;
- conformally forming a high-k dielectric material on the dielectric liner material;
- conformally forming another dielectric liner material on the high-k dielectric material;
- and
- non-conformally forming a dielectric material over the dielectric liner material.
A method of forming a memory structure, comprising:
- forming a dielectric nitride liner material on and between memory cells;
- forming a high-k dielectric material on the dielectric liner material;
- forming another dielectric nitride liner material over the high-k dielectric material;
- forming a dielectric oxide liner material on the other dielectric nitride liner material;
- and
- forming a dielectric material on the other dielectric liner material.
Dependencies are inferred from the claim text.