Memory device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTai-Yen PENG, Hui-Hsien WEI, Wei-Chih WEN, Pin-Ren DAI, Chien-Min LEE, Sheng-Chih LAI, Han-Ting TSAI, Chung-Te LIN
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Abstract
A method for fabricating a memory device includes forming a resistance switching element over a bottom electrode; forming a top electrode over the resistance switching element; forming a first spacer covering a sidewall of the resistance switching element; forming a second spacer surrounding the first spacer and exposing the top electrode; and forming a metallization pattern connected with the top electrode and the second spacer.
Claims21
A method for fabricating a memory device, comprising:
- forming a resistance switching element over a bottom electrode;
- forming a top electrode over the resistance switching element;
- forming a first spacer covering a sidewall of the resistance switching element;
- forming a second spacer surrounding the first spacer and exposing the top electrode;
- and
- forming a metallization pattern connected with the top electrode and the second spacer.
A method for fabricating a memory device, comprising:
- forming a resistance switching element over a bottom electrode;
- forming a top electrode over the resistance switching element;
- forming a first spacer covering a sidewall of the resistance switching element;
- forming a second spacer over the first spacer and exposing the top electrode;
- forming an etch stop layer over the second spacer and the resistance switching element;
- etching an opening in the etch stop layer, wherein the second spacer has a higher etch resistance to the etching the opening in the etch stop layer than that of the etch stop layer;
- and
- filling the opening with a conductive material to form a metallization pattern.
14-20. (canceled)
A method for fabricating a memory device, comprising:
- forming at least one resistance switching element over a substrate;
- depositing a first spacer layer over the at least one resistance switching element at a first temperature;
- patterning the first spacer layer into at least one first spacer covering a sidewall of the resistance switching element;
- depositing a second spacer layer over the at least one first spacer at a second temperature higher than the first temperature;
- and
- patterning the second spacer layer into a second spacer covering the at least one first spacer.
Dependencies are inferred from the claim text.